Hafnium Dioxide
HfO2
Hafnium Dioxide
Data Sheet
Physical Properties
- Melting Point: 2758°C
- Density: 9.68 g/cm³
Chemical Properties
- Chemical Formula: HfO2
- Reactivity: Quite inert, reacts with strong acids and bases
Applications
- Microelectronics: HfO₂ thin films are used as high-κ dielectrics in metal-oxide-semiconductor field-effect transistors (MOSFETs). They help reduce gate leakage and improve device performance
- Ferroelectric Memory: HfO₂-based thin films are utilized in ferroelectric random-access memory (FeRAM) and other non-volatile memory devices due to their ferroelectric properties
- Optical Coatings: These films are used in optical coatings for lenses and mirrors, providing high refractive index and low absorption
- Energy Harvesting: They are used in energy harvesting devices, such as pyroelectric and electrocaloric coolers, due to their ability to convert thermal energy into electrical energy
Forms
Evaporation Material
(any dimension)
Pellets or Starter Sources
HfO2 pellets 3mm x 6mm
Purity Guide
| Purity | Level | Metallic Impurities Allowed (PPM) |
| (2N) 99% | 99% | 10,000 |
| (2N5) | 99.5% | 5,000 |
| (3N) | 99.9% | 1,000 |
| (3N5) | 99.95% | 500 |
| (4N) | 99.99% | 100 |
| (4N5) | 99.995% | 50 |
| (5N) | 99.999% | 10 |
| (5N5) | 99.9995% | 5 |
| (6N) | 99.9999% | 1 |
Example of an Actual Certificate of Analysis
| Element | PPM Level | Element | PPM Level |
| Fe | 6.8 | Al | 5 |
| B | 0.002 | Na | 0.05 |
| Si | 2 | P | 0.01 |
| S | 0.1 | Ca | 0.01 |
| Ti | 0.06 | Cr | 0.65 |
| Mn | 0.004 | Ni | 0.05 |
| Ga | 0.24 | Nb | 0.08 |
| In | 0.02 | Cu | 0.044 |
| Zn | 0.005 | Sc | 0.2 |
| Ta | 3.2 | Ir | 0.02 |
| Pt | 0.04 |