| Aluminum | Al | 660 | 2.7 | 1.08 | 677 | 821 | 1010 | eBeam (Xlnt) | TiB2-TiC, TiB2-BN,
graphite, BN | High deposition rates possible. Al wets IMCS |
| Aluminum Antimonide | AlSb | 1080 | 4.3 | — | — | — | — | eBeam (fair) | TiB2-BN, BN, C, Al2O3 | Co-evaporation is the best approach |
| Aluminum Arsenide | AlAs | 1600 | 3.7 | — | — | — | ~1300 | eBeam (poor) | TiB2-BN, BN, Al2O3 | Co-evaporation can work but typically done with MBE |
| Aluminum Bromide | AlBr3 | 97 | 3.01 | — | — | — | ~50 | eBeam (poor) | graphite, W | eBeam or thermal evaporation of anhydrous AlBr3 powder |
| Aluminum Carbide | Al4C3 | 1400 | 2.36 | — | — | — | ~800 | eBeam (fair) | graphite, W | eBeam evaporation from powder, but CVD is a better approach |
| Aluminum 2% Copper | Al2%Cu | 640 | 2.8 | — | — | — | — | eBeam (fair) | TiB2-TiC, BN | eBeam evaporation of Al-Cu alloys is possible, but sputter deposition is a better approach |
| Aluminum Fluoride | AlF3 | 1257 | 3.07 | — | 410 | 490 | 700 | eBeam (fair) | graphite, Mo, W | Films tend to be porous, but smooth |
| sublimes | sublimes |
| Aluminum Nitride | AlN | — | 3.26 | — | — | — | ~1750 | eBeam (fair) | TiB2-TiC,
graphite, BN | Reactive evaporation of Al in N2 or ammonia partial pressure |
| sublimes |
| Aluminum Oxide (Alumina) | Al2O3 | 2045 | 3.97 | 0.336 | — | — | 1550 | eBeam (Xlnt) | W, graphite | Swept beam with low deposition rates (< 3 Å/sec) |
| Aluminum 2% Silicon | Al2%Si | 640 | 2.6 | — | — | — | 1010 | eBeam (fair) | TiB2-TiC, BN | eBeam evaporation of Al-Si alloys is possible, but sputter deposition is a better approach |
| Antimony | Sb | 630 | 6.68 | — | 279 | 345 | 425 | eBeam (fair) | BN, graphite, Al2O3 | As the deposition rate is increased from 3-5 Å/s the grain size decreases and film coverage improves |
| sublimes |
| Antimony Telluride | Sb2Te3 | 619 | 6.5 | — | — | — | 600 | eBeam (fair) | graphite, BN, W | Best results are achieved with powdered source material, relatively high deposition rates can be achieved |
| Antimony Trioxide | Sb2O3 | 656 | 5.2 or 5.76 | — | — | — | ~300 | eBeam (good) | BN, Al2O3 | eBeam evaporation from powder or granules |
| sublimes |
| Antimony Triselenide | Sb2Se3 | 611 | — | — | — | — | — | eBeam (fair) | graphite | Can be co-evaporated with Se to overcome variable stoichiometric effects |
| Antimony Trisulphide | Sb2S3 | 550 | 4.64 | — | — | — | ~200 | eBeam (good) | Al2O3, Mo, Ta | Films without substrate heating are amorphous, while polycrystalline films form on heated substrates |
| Arsenic | As | 814 | 5.73 | — | 107 | 150 | 210 | eBeam (poor) | Al2O3, BeO,
graphite | Sputter deposition is the preferred method for deposition of elemental arsenic |
| Arsenic Selenide | As2Se3 | 360 | 4.75 | — | — | — | — | eBeam (poor) | Al2O3, quartz | Deposition efficiency increases with deposition rate |
| Arsenic Trisulphide | As2S3 | 300 | 3.43 | — | — | — | ~400 | eBeam (fair) | Al2O3, quartz, Mo | Thin films tend to be richer in As compared to the source material |
| Arsenic Tritelluride | As2Te3 | 362 | — | — | — | — | — | eBeam (poor) | Al2O3, quartz | CVD is the preferred deposition technique for this material |
| Barium | Ba | 710 | 3.78 | — | 545 | 627 | 735 | eBeam (fair) | W, Ta, Mo | Reacts with ceramics. Ba evaporation pellets are often shipped with protective coatings which must be removed |
| Barium Chloride | BaCl2 | 962 | 3.86 | — | — | — | ~650 | eBeam (poor) | W, Mo | Swept beam and slow power ramp to precondition and outgas the source material |
| Barium Fluoride | BaF2 | 1280 | 4.83 | — | — | — | ~700 | eBeam (fair) | W, Mo | Better consistency in refractive index is achieved via CVD |
| sublimes |
| Barium Oxide | BaO | 1923 | 5.72 or 5.32 | — | — | — | ~1300 | eBeam (fair) | Al2O3, quartz | Swept beam and slow power ramp to precondition and outgas the source material |
| Barium Sulphide | BaS | 2200 | 4.25 | — | — | — | 1100 | eBeam (poor) | W, Mo | Sputter deposition is the preferred deposition technique |
| Barium Titanate | BaTiO3 | Decomposes | 6 | — | Decomposes | eBeam (poor) | W, Mo | BaTiO3 will decompose as single source. Co-evaporate with Ti to maintain Ba/Ti ratio |
| Beryllium | Be | 1278 | 1.85 | — | 710 | 878 | 1000 | eBeam (Xlnt) | graphite | Very high deposition rates are possible. Avoid Be powder sources due to toxicity |
| Beryllium Chloride | BeCl2 | 440 | 1.9 | — | — | — | ~150 | eBeam (poor) | graphite | CVD is the preferred deposition technique for this material |
| Beryllium Fluoride | BeF2 | 800 | 1.99 | — | — | — | ~200 | eBeam (fair) | graphite | Avoid powder sources due to toxicity |
| sublimes |
| Beryllium Oxide | BeO | 2530 | 3.01 | — | — | — | 1900 | eBeam (fair) | graphite, Al2O3 | Thin films can also be produced via reactive evaporation of Be with O2 |
| Bismuth | Bi | 271 | 9.8 | — | 330 | 410 | 520 | eBeam (Xlnt) | Al2O3, graphite | Post deposition thermal annealing significantly enhances film properties. However, vapors are toxic |
| Bismuth Fluoride | BiF3 | 727 | 8.75 | — | — | — | ~300 | eBeam (poor) | graphite | Sublimes at relatively low temperature, so reasonable vapor pressure can be achieved |
| sublimes |
| Bismuth Oxide | Bi2O3 | 820 | 8.9 | — | — | — | ~1400 | eBeam (poor) | — | eBeam evaporation from Bi2O3 source is possible, but variations in thin film stoichiometry may occur |
| Bismuth Selenide | Bi2Se3 | 710 | 7.66 | — | — | — | ~650 | eBeam (fair) | graphite, quartz | Sputter deposition is preferred, but
co-evaporation using Bi and Se sources is possible |
| Bismuth Telluride | Bi2Te3 | 585 | 7.85 | — | — | — | ~600 | eBeam (fair) | graphite, quartz | Sputter deposition is preferred, but
co-evaporation using Bi and Te sources is possible |
| Bismuth Titanate | Bi2Ti2O7 | — | — | — | Decomposes | eBeam (poor) | graphite, quartz | Decomposes when evaporated. Sputter deposition is preferred, but can be reactively co-evaporated in O2 partial pressure |
| Bismuth Trisulphide | Bi2S3 | 685 | 7.39 | — | — | — | — | eBeam (poor) | graphite, W | Can be co-evaporated from Bi and S sources |
| Boron | B | 2100 | 2.36 | 0.389 | 1278 | 1548 | 1797 | eBeam (Xlnt) | graphite, W | Can react with graphite and tungsten crucible liners. Requires high power to evaporate |
| sublimes |
| Boron Carbide | B4C | 2350 | 2.5 | — | 2500 | 2580 | 2650 | eBeam (good) | graphite, W | Ion assisted eBeam deposition with Ar can improve film adhesion |
| Boron Nitride | BN | 2300 | 2.2 | — | — | — | ~1600 | eBeam (poor) | graphite, W | Ion assisted eBeam deposition with N2 produces stoichiometric thin films, but sputter deposition is preferred |
| sublimes |
| Boron Oxide | B2O3 | 460 | 1.82 | — | — | — | ~1400 | eBeam (good) | W, Mo | eBeam evaporation from bulk source material produces stoichiometric thin films |
| Boron Trisulphide | B2S3 | 310 | 1.55 | — | — | — | 800 | eBeam (poor) | graphite | — |
| Cadmium | Cd | 321 | 8.64 | — | 64 | 120 | 180 | eBeam (fair) | Al2O3, quartz | Dedicated system is recommended, since Cd can contaminate other purity sensitive depositions |
| Cadmium Antimonide | CdSb | 456 | 6.92 | — | — | — | — | — | — | — |
| Cadmium Arsenide | Cd3As2 | 721 | 6.21 | — | — | — | — | eBeam (poor) | quartz | Thin films can be produced by eBeam evaporation from bulk source material, but CVD is a preferred deposition method |
| Cadmium Bromide | CdBr2 | 567 | 5.19 | — | — | — | ~300 | — | — | — |
| Cadmium Chloride | CdCl2 | 570 | 4.05 | — | — | — | ~400 | — | — | — |
| Cadmium Fluoride | CdF2 | 1070 | 5.64 | — | — | — | ~500 | — | — | — |
| Cadmium Iodide | CdI2 | 400 | 5.3 | — | — | — | ~250 | — | — | CdI2 films have been deposited by thermal evaporation on glass substrates using stoichiometric powders |
| Cadmium Oxide | CdO | 900 | 6.95 | — | — | — | ~530 | eBeam (poor) | Al2O3, quartz | Can be produced by reactive evaporation of Cd in partial pressure of O2 or reactive sputtering with O2 |
| Cadmium Selenide | CdSe | 1264 | 5.81 | — | — | — | 540 | eBeam (good) | Al2O3, quartz, graphite | eBeam evaporation from bulk source material produces uniform films |
| Cadmium Siliside | CdSiO2 | — | — | — | — | — | ~600 | — | — | Reports in the literature of deposition by CVD |
| Cadmium Sulphide | CdS | 1750 | 4.82 | — | — | — | 550 | eBeam (fair) | Al2O3, quartz, graphite | Substrate heating improves film adhesion. Deposition rates of 15 Å/sec are possible |
| sublimes |
| Cadmium Telluride | CdTe | 1098 | 6.2 | — | — | — | 450 | eBeam (fair) | Al2O3, quartz, graphite | High quality CdTe thin films on glass substrates at 100°C have been fabricated with eBeam deposition |
| Calcium | Ca | 842 | 1.56 | — | 272 | 357 | 459 | eBeam (poor) | Al2O3, quartz | Low partial pressure of O2 in the vacuum chamber is required to avoid oxidizing the Ca |
| sublimes |
| Calcium Fluoride | CaF2 | 1360 | 3.18 | — | — | — | ~1100 | eBeam (Xlnt) | quartz, Ta | Deposition rate of 20 Å/sec are easily achieved with eBeam deposition.
Substrate heating improves film quality |
| Calcium Oxide | CaO | 2580 | 3.35 | — | — | — | ~1700 | eBeam (poor) | ZrO2, graphite | Forms volatile oxides with W and Mo |
| Calcium Silicate | CaO-SiO2 | 1540 | 2.9 | — | — | — | — | eBeam (good) | quartz | Post deposition thermal annealing at 500°C improves film quality and adhesion |
| Calcium Sulphide | CaS | — | 2.18 | — | — | — | 1100 | eBeam (poor) | ZrO2, graphite | Decomposition of CaS bulk source material can be overcome by co- evaporation with S |
| sublimes |
| Calcium Titanate | CaTiO3 | 1975 | 4.1 | — | 1490 | 1600 | 1690 | eBeam (poor) | — | Sputter deposition is the preferred method |
| Calcium Tungstate | CaWO4 | 1620 | 6.06 | — | — | — | — | eBeam (good) | W, ZrO2 | Substrate heating improves the crystallinity of the deposit |
| Carbon (diamond) | C | — | 1.8-2.3 | 0.22 | 1657 | 1867 | 2137 | eBeam (Xlnt) | graphite, W | Better film adhesion results from eBeam evaporation compared to vacuum arc deposition |
| sublimes | sublimes |
| Cerium | Ce | 795 | 8.23 | — | 970 | 1150 | 1380 | eBeam (good) | Al2O3, BeO,
graphite | Ce deposits readily oxidize when exposed to air |
| Ceric Oxide | CeO2 | 2600 | 7.3 | — | 1890 | 2000 | 2310 | eBeam (good) | graphite, Ta | Stoichiometric films are best achieved using reactive evaporation with O2.
Substrate heating improves film quality |
| sublimes |
| Cerium Fluoride | CeF3 | 1418 | 6.16 | — | — | — | ~900 | eBeam (good) | Mo, Ta, W | Can be produced using bulk source material. Substrate heating from
150-300°C improves adhesion and film quality |
| Cerium Oxide | Ce2O3 | 1692 | 6.87 | — | — | — | — | eBeam (fair) | graphite, Ta | Mixed CeO2-Ce2O3 films can be reduced to Ce2O3 by heating in UHV at 725°C |
| Cesium | Cs | 28 | 1.87 | — | -16 | 22 | 30 | eBeam (poor) | quartz | — |
| Cesium Bromide | CsBr | 636 | 4.44 | — | — | — | ~400 | — | — | — |
| Cesium Chloride | CsCl | 646 | 3.97 | — | — | — | ~500 | — | — | — |
| Cesium Fluoride | CsF | 684 | 3.59 | — | — | — | ~500 | — | — | — |
| Cesium Hydroxide | CsOH | 272 | 3.67 | — | — | — | ~550 | — | — | — |
| Cesium Iodide | CsI | 621 | 4.51 | — | — | — | ~500 | eBeam (poor) | quartz, Pt | Stoichiometric CsI films are possible from bulk, source material, but good film coverage can be a challenge |
| Chiolote | Na5Al3F14 | — | 2.9 | — | — | — | ~800 | eBeam (poor) | Al2O3 | Stoichiometric chiolite films are difficult to fabricate with eBeam evaporation |
| Chromium | Cr | 1890 | 7.2 | 0.305 | 837 | 977 | 1157 | eBeam (good) | W, graphite | Films are very adherent. High deposition rates possible, but uniformity can be an issue |
| sublimes |
| Chromium Boride | CrB | 2760 | 6.17 | — | — | — | — | — | — | — |
| Chromium Bromide | CrBr2 | 842 | 4.36 | — | — | — | 550 | — | — | — |
| Chromium Carbide | Cr3C2 | 1890 | 6.68 | — | — | — | ~2000 | eBeam (fair) | W | Can be fabricated by co-evaporation of Cr and C |
| Chromium Chloride | CrCl2 | 824 | 2.75 | — | — | — | 550 | — | — | — |
| Chromium Oxide | Cr2O3 | 2435 | 5.21 | — | — | — | ~2000 | eBeam (good) | W | Stoichiometry can be maintained by reactive evaporation in O2 |
| Chromium Siliside | Cr3Si | 1710 | 6.51 | — | — | — | — | — | — | — |
| Chromium Silicon Monoxide | Cr-SiO | Influenced by Composition | eBeam (good) | W | The quality Cr-SiO cermet films fabricated with eBeam evaporation improves with annealing at 425° C |
| Cobalt | Co | 1495 | 8.9 | — | 850 | 990 | 1200 | eBeam (Xlnt) | Al2O3, BeO,
graphite | Pellets or powder both work well as source material |
| Cobalt Bromide | CoBr2 | 678 | 4.91 | — | — | — | 400 | — | — | — |
| sublimes |
| Cobalt Chloride | CoCl2 | 740 | 3.36 | — | — | — | 472 | — | — | — |
| sublimes |
| Cobalt Oxide | CoO | 1935 | 5.68 | — | — | — | — | eBeam (fair) | — | CoO can be fabricated by reactive evaporation with O2, but sputter deposition is the preferred fabrication method |
| Copper | Cu | 1083 | 8.92 | 0.437 | 727 | 857 | 1017 | eBeam (Xlnt) | Al2O3, Mo Ta,
graphite | Poor adhesion on most substrates. Use thin adhesion layer of Cr or Ti |
| Copper Chloride | CuCl | 422 | 3.53 | — | — | — | ~600 | eBeam (poor) | quartz | Stoichiometric CuCl films have been produced from pellets and powder source material |
| Copper Oxide | Cu2O | 1235 | 6 | — | — | — | ~600 | eBeam (good) | graphite, Al2O3, Ta | Thin films have been fabricated from stoichiometric Cu2O powder |
| sublimes |
| Copper Sulfide | CuS | 1113 | 6.75 | — | — | — | ~500 | — | — | — |
| sublimes |
| Cryolite | Na3AlF6 | 1000 | 2.9 | — | 1020 | 1260 | 1480 | eBeam (good) | W, graphite | Good films can be fabricated using pellets or powder source material. |
| Dyprosium | Dy | 1409 | 8.54 | — | 625 | 750 | 900 | eBeam (good) | W | Quality thin films can be fabricated from bulk source material |
| Dyprosium Fluoride | DyF3 | 1360 | 6 | — | — | — | ~800 | eBeam (good) | W, Ta | Bulk source material is available in pellets and powder form |
| sublimes |
| Dyprosium Oxide | Dy2O3 | 2340 | 7.81 | — | — | — | ~1400 | eBeam (fair) | W | Thin films have been fabricated from bulk source material |
| Erbium | Er | 1497 | 9.06 | 0.74 | 650 | 775 | 930 | eBeam (good) | W, Ta | — |
| sublimes |
| Erbium Fluoride | ErF2 | 1380 | 6.5 | — | — | — | ~950 | — | — | — |
| Erbium Oxide | Er2O3 | 2400 | 8.64 | — | — | — | ~1600 | eBeam (fair) | W | Reactive evaporation of bulk material in O2 atmosphere maintains stoichiometry. |
| Europium | Eu | 822 | 5.26 | — | 280 | 360 | 480 | eBeam (fair) | Al2O3 | — |
| sublimes |
| Europium Fluoride | EuF2 | 1380 | 6.5 | — | — | — | ~950 | — | — | — |
| Europium Oxide | Eu2O3 | 2400 | 8.64 | — | — | — | ~1600 | eBeam (good) | W | Reactive evaporation of Eu2O3 powder or granules in O2 atmosphere maintains stoichiometry. |
| Europium Sulphide | EuS | — | 5.75 | — | — | — | — | eBeam (good) | W | eBeam evaporation of EuS powder in UHV (10-8 torr base vacuum) has been reported in the literature |
| Gadolinium | Gd | 1312 | 7.89 | — | 760 | 900 | 1175 | eBeam (Xlnt) | Al203, W | eBeam evaporation of Gd directly from the water cooled Cu hearth has been reported |
| Gadolinium Oxide | Gd2O3 | 2310 | 7.41 | — | — | — | — | eBeam (fair) | Al203, W | Reactive evaporation of Gd2O3 pellets in O2 maintains thin film stoichiometry. Refractive index increases with substrate heating |
| Gallium | Ga | 30 | 5.9 | — | 619 | 742 | 907 | eBeam (good) | graphite, Al2O3, BeO, quartz | Alloys with refractory metals |
| Gallium Antimonide | GaSb | 710 | 5.6 | — | — | — | — | eBeam (fair) | W, Ta | eBeam evaporation from bulk source material is possible |
| Gallium Arsenide | GaAs | 1238 | 5.3 | — | — | — | — | eBeam (good) | graphite, W | Film quality is improved with ion assisted evaporation |
| Gallium Nitride | GaN | — | 6.1 | — | — | — | ~200 | eBeam (fair) | graphite, Al2O3, BeO, quartz | Reactive evaporation of Ga in 10-3 N
2 |
| sublimes |
| Gallium Oxide (ß) | Ga2O3 | 1900 | 5.88 | — | — | — | — | eBeam (fair) | graphite, W | Reactive evaporation of Ga2O3 in O2 partial pressure maintains stoichiometry |
| Gallum Phosphide | GaP | 1540 | 4.1 | — | — | 770 | 920 | eBeam (fair) | quartz, W | Co-evaporation of Ga and P has been reported |
| Gemanium | Ge | 937 | 5.35 | 0.516 | 812 | 957 | 1167 | eBeam (Xlnt) | Al2O3, quartz, graphite, Ni | Uniform films achieved with slow power ramp and swept beam |
| Germanium Nitride | Ge3N2 | 450 | 5.2 | — | — | — | ~650 | eBeam (poor) | — | Sputtering is the preferred method of fabrication |
| sublimes |
| Germanium Oxide | GeO2 | 1086 | 6.24 | — | — | — | ~625 | eBeam (good) | graphite, Al2O3, quartz | GeO2 stoichiometry can be maintained by reactive evaporation of bulk source material in O2 |
| Germanium Telluride | GeTe | 725 | 6.2 | — | — | — | 381 | — | — | — |
| Gold | Au | 1062 | 19.32 | 0.381 | 807 | 947 | 1132 | eBeam (Xlnt) | W, Al2O3,
graphite, BN | Metal spitting can be an issue. Mitigate by slow power ramp with swept beam and low carbon content in source material |
| Hafnium | Hf | 2230 | 13.09 | — | 2160 | 2250 | 3090 | eBeam (good) | W | — |
| Hafnium Boride | HfB2 | 3250 | 10.5 | — | — | — | — | — | — | Fabrication of HfB2 films by CVD has been reported |
| Hafnium Carbide | HfC | 4160 | 12.2 | — | — | — | ~2600 | — | — | — |
| sublimes |
| Hafnium Nitride | HfN | 2852 | 13.8 | — | — | — | — | — | — | HfN films have been produced by reactive RF sputtering of Hf in N2 + Ar |
| Hafnium Oxide | HfO2 | 2812 | 9.68 | — | — | — | ~2500 | eBeam (fair) | graphite, W | Can be fabricated by reactive evaporation in O2 or using bulk source material. Post process annealing at 500°C improves film quality |
| Hafnium Silicide | HfSi2 | 1750 | 7.2 | — | — | — | — | eBeam (fair) | W | HfSi2 thin films have been fabricated by eBeam evaporation of Hf on Si substrates followed by annealing at 750°C for an hour |
| Holmium | Ho | 1470 | 8.8 | — | 650 | 770 | 950 | eBeam (good) | W | — |
| sublimes |
| Holmium Fluoride | HoF3 | 1143 | 7.64 | — | — | — | ~800 | — | quartz | — |
| Holmium Oxide | Ho2O3 | 2370 | 8.41 | — | — | — | — | eBeam (fair) | W | Ho2O3 thin films have been fabricated by eBeam evaporation of powdered source material or reactive evaporation of Ho in O2 |
| Indium | In | 157 | 7.3 | 0.841 | 487 | 597 | 742 | eBeam (Xlnt) | Mo, graphite, Al2O3 | Wets Cu and W. Mo liner is preferred |
| Indium Antimonide | InSb | 535 | 5.8 | — | 500 | — | ~400 | eBeam (fair) | graphite, W | Thin films fabricated using powdered source material |
| Indium Arsenide | InAs | 943 | 5.7 | — | 780 | 870 | 970 | — | — | Sputter deposition is the preferred thin film fabrication technique |
| Indium Oxide | In2O3 | 1565 | 7.18 | — | — | — | ~1200 | eBeam (good) | Al2O3 | Thin films have been produced by reactive evaporation of powdered In2O3 in O2 partial pressure. |
| sublimes |
| Indium Phosphide | InP | 1058 | 4.8 | — | — | 630 | 730 | eBeam (fair) | graphite, W | Deposits are P rich |
| Indium Selenide | In2Se3 | 890 | 5.7 | — | — | — | — | eBeam (fair) | graphite, W | Thin films have been fabricated by eBeam evaporation from powdered InSe. Post process annealing improves crystallinity |
| Indium Sesquisulphide | In2S3 | 1050 | 4,9 | — | — | — | 850 | — | — | — |
| sublimes |
| Indium Sulphide | In2S | 653 | 5.87 | — | — | — | 650 | — | — | — |
| Indium Telluride | In2Te3 | 667 | 5.8 | — | — | — | — | — | — | Thin films from co-evaporation of In and Te sources has been reported. |
| Indium Tin Oxide | In2O3– SnO2 | 1800 | 6.43-7.14 | — | — | — | — | eBeam (good) | graphite | Thin films have been produced from 90% In2O3-10%SnO2 powder in O2 partial pressure. Substrate temperature of 250°C improves electrical conductivity of resulting films |
| Iridium | Ir | 2459 | 22.65 | — | 1850 | 2080 | 2380 | eBeam (fair) | W | Better uniformity and adhesion can be achieved using sputter deposition |
| Iron | Fe | 1535 | 7.86 | 0.349 | 858 | 998 | 1180 | eBeam (Xlnt) | Al2O3, BeO,
graphite | Molten Fe will attack and adhere to graphite, severely limiting crucible liner life |
| Iron Bromide | FeBr2 | 689 | 4.64 | — | — | — | 561 | — | — | — |
| Iron Chloride | FeCl2 | 670 | 2.98 | — | — | — | 300 | — | — | — |
| sublimes |
| Iron Iodide | FeI2 | 592 | 5.31 | — | — | — | 400 | — | — | — |
| Iron Oxide | FeO | 1425 | 5.7 | — | — | — | — | eBeam (poor) | — | Sputter deposition preferred. |
| Iron Oxide | Fe2O3 | 1565 | 5.24 | — | — | — | — | eBeam (good) | Al2O3, BeO,
graphite | Fe2O3 thin films fabricated by reactive evaporation of Fe in 0.1 Pa O2 partial pressure has been reported |
| Iron Sulphide | FeS | 1195 | 4.84 | — | — | — | — | — | — | — |
| Lanthanum | La | 920 | 6.17 | — | 990 | 1212 | 1388 | eBeam (Xlnt) | W, Ta | — |
| Lanthanum Boride | LaB6 | 2210 | 2.61 | — | — | — | — | eBeam (fair) | — | LaB6 films and coatings are more commonly produced with sputter deposition. |
| Lanthanum Bromide | LaBr3 | 783 | 5.06 | — | — | — | — | — | — | — |
| Lanthanum Fluoride | LaF3 | 1490 | 6 | — | — | — | 900 | eBeam (good) | Ta, Mo | Ion assisted eBeam evaporation improves film density and adhesion |
| sublimes |
| Lanthanum Oxide | La2O3 | 2250 | 5.84 | — | — | — | 1400 | eBeam (good) | W, graphite | C contamination can occur with graphite crucible liners |
| Lead | Pb | 328 | 11.34 | 1.13 | 342 | 427 | 497 | eBeam (Xlnt) | Al2O3, quartz, graphite, W | — |
| Lead Bromide | PbBr2 | 373 | 6.66 | — | — | — | ~300 | — | — | — |
| Lead Chloride | PbCl2 | 501 | 5.85 | — | — | — | ~325 | — | — | — |
| Lead Fluoride | PbF2 | 822 | 8.24 | — | — | — | ~400 | — | — | — |
| sublimes |
| Lead Iodide | PbI2 | 502 | 6.16 | — | — | — | ~500 | — | — | — |
| Lead Oxide | PbO | 890 | 9.53 | — | — | — | ~550 | eBeam (fair) | Al2O3, quartz, W | Stoichiometric PbO thin films can be produced using powdered source material |
| Lead Stannate | PbSnO3 | 1115 | 8.1 | — | 670 | 780 | 905 | eBeam (poor) | Al2O3, W | Disproportionates |
| Lead Selenide | PbSe | 1065 | 8.1 | — | — | — | ~500 | eBeam (fair) | Al2O3, graphite | — |
| sublimes |
| Lead Sulphide | PbS | 1114 | 7.5 | — | — | — | 550 | eBeam (fair) | Al2O3, quartz | Post deposition annealing at 150°C improves the crystallinity of the films |
| sublimes |
| Lead Telluride | PbTe | 917 | 8.16 | — | 780 | 910 | 1050 | eBeam (poor) | Al2O3, graphite | Films produced from bulk PbTe tend to be Te rich. Sputter deposition is preferred |
| Lead Titanate | PbTiO3 | — | 7.52 | — | — | — | — | eBeam (fair) | W, Ta | Thin films of PbTiO3 with reactive co- evaporation of PbO powder and TiO2 pellets in O2 partial pressure has been reported |
| Lithium | Li | 179 | 0.53 | — | 227 | 307 | 407 | eBeam (good) | Ta, Al2O3, BeO | Li films oxidize readily in air |
| Lithium Bromide | LiBr | 547 | 3.46 | — | — | — | ~500 | — | — | — |
| Lithium Chloride | LiCl | 613 | 2.07 | — | — | — | 400 | — | — | — |
| Lithium Fluoride | LiF | 870 | 2.6 | — | 875 | 1020 | 1180 | eBeam (good) | W, Mo, Ta, Al2O3 | Rate control important for optical films. Outgas prior to deposition rastered beam |
| Lithium Iodide | LiI | 446 | 4.06 | — | — | — | 400 | — | — | — |
| Lithium Oxide | Li2O | 1427 | 2.01 | — | — | — | 850 | — | — | — |
| Lutetium | Lu | 1652 | 9.84 | — | — | — | 1300 | eBeam (Xlnt) | Al2O3 | — |
| Lutetuim Oxide | Lu2O3 | 2489 | 9.81 | — | — | — | 1400 | eBeam (fair) | Al2O3 | eBeam evaporation of powdered source material results in stoichiometric films by post deposition rapid thermal anneal in O2 at 400-600°C |
| Magnesium | Mg | 651 | 1.74 | — | 185 | 247 | 327 | eBeam (good) | W, graphite, Al2O3 | Powder is flammable. High deposition rates are possible |
| sublimes |
| Magnesium Aluminate | MgAl2O4 | 2135 | 3.6 | — | — | — | — | — | — | eBeam deposition from MgAl2O4 powder has been reported |
| Magnesium Bromide | MgBr2 | 700 | 3.72 | — | — | — | ~450 | — | — | — |
| Magnesium Chloride | MgCl2 | 708 | 2.32 | — | — | — | 400 | — | — | — |
| Magnesium Fluoride | MgF2 | 1266 | 2.9-3.2 | — | — | — | 1000 | eBeam (Xlnt) | Al2O3, graphite, Mo | Best optical properties result from substrate heating at 300°C and a deposition rate of ≤ 5 Å/sec |
| Magnesium Iodide | MgI2 | 700 | 4.24 | — | — | — | 200 | — | — | — |
| Magnesium Oxide | MgO | 2800 | 3.58 | — | — | — | 1300 | eBeam (good) | Al2O3, graphite | Stoichiometric films result from reactive evaporation in partial pressure of 10-3 torr O2 |
| Manganese | Mn | 1244 | 7.2 | — | 507 | 572 | 647 | eBeam (good) | W, Al2O3, BeO | — |
| sublimes |
| Manganese Bromide | MnBr2 | 695 | 4.38 | — | — | — | 500 | — | — | — |
| Manganese Chloride | MnCl2 | 650 | 2.98 | — | — | — | 450 | — | — | — |
| Manganese IV Oxide | MnO2 | 535 | 5.03 | — | — | — | — | eBeam (poor) | W, Mo, Al2O3 | Stoichiometric thin films have been produced by reactive evaporation of Mn powder in 10-3 torr O
2 |
| Manganese Sulphide | MnS | 1615 | 3.99 | — | — | — | 1300 | — | — | — |
| Mercury | Hg | -39 | 13.55 | — | -68 | -42 | -6 | — | — | Toxic, not recommended for evaporation processes |
| Mercury Sulphide | HgS | | 8.1 | — | — | — | 250 | eBeam (poor) | Al2O3 | Toxic and decomposes, not recommended for evaporation processes |
| sublimes | sublimes |
| Molybdenum | Mo | 2610 | 10.22 | — | 1592 | 1822 | 2117 | eBeam (Xlnt) | graphite, W | Films are smooth, hard and adherent |
| Molybdenum Boride | MoB2 | 2100 | 7.12 | — | — | — | — | — | — | — |
| Molybdenum Carbide | Mo2C | 2687 | 9.18 | — | — | — | — | — | — | Thin films of Mo2C by sputter deposition and CVD have been reported |
| Molybdenum Disulphide | MoS2 | 1185 | 4.8 | — | — | — | ~50 | — | — | Fabrication of MoS2 by CVD has been reported |
| Molybdenum Silicide | MoSi2 | 2050 | 6.3 | — | — | — | ~50 | — | — | MoSi2 films have been produced by sputter deposition |
| Molybdenum Trioxide | MoO3 | 795 | 4.7 | — | — | — | ~900 | eBeam (fair) | Al2O3, graphite, BN, Mo | Substrate heating improves film crystallinity |
| Neodymium | Nd | 1024 | 7 | — | 731 | 871 | 1062 | eBeam (Xlnt) | Al2O3, Ta | — |
| Neodymium Fluoride | NdF3 | 1410 | 6.5 | — | — | — | ~900 | eBeam (good) | W, Mo, Al2O3 | Substrate heating at 360°C improved film quality |
| Neodymium Oxide | Nd2O3 | 2272 | 7.24 | — | — | — | ~1400 | eBeam (good) | W, Ta | Films may be oxygen deficient. Refractive index increases with increasing substrate temperature |
| Nickel | Ni | 1453 | 8.91 | 0.331 | 927 | 1072 | 1262 | eBeam (Xlnt) | Al2O3, BeO, W,
graphite | Differential thermal expansion between Ni and graphite can cause graphite crucible liners to crack on cooling |
| Nickel Bromide | NiBr2 | 963 | 4.64 | — | — | — | 362 | — | — | — |
| sublimes |
| Nickel Chloride | NiCl2 | 1001 | 3.55 | — | — | — | 444 | — | — | — |
| sublimes |
| Nickel Oxide | NiO | 1990 | 7.45 | — | — | — | ~1470 | eBeam (good) | Al2O3, W | Substrate temperature of 125°C improves film adhesion and quality. Use of NiO powder as source material mitigates spitting |
| Niobium (Columbium) | Nb (Cb) | 2468 | 8.55 | — | 1728 | 1977 | 2287 | eBeam (Xlnt) | graphite | Ion assisted eBeam evaporation modifies Nb film stress from tensile to compressive at a substrate temperature of 400°C |
| Niobium Boride | NbB2 | 3050 | 6.97 | — | — | — | — | — | — | — |
| Niobium Carbide | NbC | 3800 | 7.82 | — | — | — | — | eBeam (fair) | graphite | NbC thin films on Ti has been reported |
| Niobium Nitride | NbN | 2573 | 8.4 | — | — | — | — | eBeam (fair) | graphite, W | NbN films have been fabricated using reactive evaporation and reactive sputtering in N2. NbN films by ion assisted evaporation have also been reported |
| Niobium Oxide | NbO | — | 6.27 | — | — | — | 1100 | — | — | — |
| Niobium Pentoxide | Nb2O5 | 1530 | 4.47 | — | — | — | — | — | — | Nb2O5 films produced by RF magnetron sputtering using a stoichiometric target have been reported |
| Niobium Telluride | NbTe | — | 7.6 | — | — | — | — | — | — | — |
| Niobium-Tin | Nb3Sn | — | — | — | — | — | — | eBeam (Xlnt) | graphite, Ta | Films produced by co-evaporation of Nb and Sn have been reported. Substrate heating improves film homogeneity |
| Niobium Trioxide | Nb2O3 | 1780 | 7.5 | — | — | — | — | — | — | — |
| Osmium | Os | 1700 | 22.5 | — | 2170 | 2430 | 2760 | — | — | — |
| Palladium | Pd | 1550 | 12.4 | — | — | — | 1192 | eBeam (Xlnt) | W, Al2O3,
graphite | Susceptible to metal spitting. Mitigate with slow power ramp and longer soak before deposition |
| Palladium Oxide | PdO | 870 | 8.31 | — | — | — | 575 | eBeam (poor) | Al2O3 | Decomposes |
| Phosphorus | P | 41.4 | 1.82 | — | 327 | 361 | 402 | eBeam (poor) | Al2O3 | Reacts violently in air |
| Platinum | Pt | 1769 | 21.45 | 0.245 | 1292 | 1492 | 1747 | eBeam (Xlnt) | W, Al2O3,
graphite | Low deposition rates (< 5 Å/sec) preferred for film uniformity. Carbon contamination with graphite liners is possible at high power |
| Plutonium | Pu | 635 | 19 | — | — | — | — | — | — | Toxic. Radioactive |
| Polonium | Po | 254 | 9.4 | — | 117 | 170 | 244 | — | — | Toxic. Radioactive |
| Potassium | K | 64 | 0.86 | — | 23 | 60 | 125 | — | quartz | Highly reactive in air |
| Potassium Bromide | KBr | 730 | 2.75 | — | — | — | ~450 | — | quartz | Use gentle preheat to outgas |
| Potassium Chloride | KCl | 776 | 1.98 | — | — | — | ~510 | eBeam (fair) | Ta, quartz, Mo | Use gentle preheat to outgas |
| Potassium Fluoride | KF | 880 | 2.48 | — | — | — | ~500 | eBeam (poor) | quartz | Use gentle preheat to outgas |
| Potassium Hydroxide | KOH | 360 | 2.04 | — | — | — | ~400 | — | — | — |
| Potassum Iodide | KI | 72 | 3.13 | — | — | — | ~500 | — | — | — |
| Praseodymium | Pr | 931 | 6.78 | — | 800 | 950 | 1150 | eBeam (good) | W, graphite, Ta | Pr films will oxidize in air |
| Praseodymium Oxide | Pr2O3 | 2125 | 6.88 | — | — | — | 1400 | eBeam (good) | W, graphite, ThO2 | Loses oxygen. Reports of Pr2O3 thin films grown by MBE |
| 10-8 | 10-6 | 10-4 |
| Radium | Ra | 700 | 5 | — | 246 | 320 | 416 | — | — | — |
| Rhenium | Re | 3180 | 20.53 | — | 1928 | 2207 | 2571 | eBeam (good) | W, graphite | Substrate heating at 600°C improves film properties |
| Rhenium Oxide | ReO3 | 297 | 8.2 | — | — | — | ~100 | eBeam (good) | W, graphite | Films produced by reactive evaporation of Re in 10-3 torr O
2 |
| Rhodium | Rh | 1966 | 12.41 | — | 1277 | 1472 | 1707 | eBeam (good) | W, graphite | — |
| Rubidium | Rb | 38.5 | 1.47 | — | -3 | 37 | 111 | — | quartz | — |
| Rubidium Chloride | RbCl | 715 | 2.76 | — | — | — | ~500 | — | quartz | — |
| Rubidium Iodide | RbI | 642 | 3.55 | — | — | — | ~400 | — | quartz | — |
| Ruthenium | Ru | 2700 | 12.45 | — | 1780 | 1990 | 2260 | eBeam (poor) | W | Material spits using eBeam. Sputter deposition is preferred |
| Samarium | Sm | 1072 | 7.54 | — | 373 | 460 | 573 | eBeam (good) | Al2O3 | — |
| Samarium Oxide | Sm2O3 | 2350 | 7.43 | — | — | — | — | eBeam (good) | W | Loses oxygen. Sputter deposition is preferred |
| Samarium Sulphide | Sm2S3 | 1900 | 5.72 | — | — | — | — | — | — | — |
| Scandium | Sc | 1539 | 2.99 | — | 714 | 837 | 1002 | eBeam (Xlnt) | W, Mo, Al2O3 | Alloys with Ta |
| Scandium Oxide | Sc2O3 | 2300 | 3.86 | — | — | — | ~400 | eBeam (fair) | W | Loses oxygen. Films produced by reactive sputtering in O2 have been reported |
| Selenium | Se | 217 | 4.79 | — | 89 | 125 | 170 | eBeam (good) | W, Mo, graphite, Al2O3 | Toxic. Can contaminate vacuum systems |
| Silicon | Si | 1410 | 2.42 | 0.712 | 992 | 1147 | 1337 | eBeam (fair) | Ta, graphite, BeO | High deposition rates possible. Molten Si can attack graphite liners limiting crucible liner life |
| Silicon Boride | SiB6 | — | 2.47 | — | — | — | — | — | — | — |
| Silicon Carbide | SiC | 2700 | 3.22 | — | — | — | 1000 | eBeam (fair) | W | Sputter deposition is the preferred thin film fabrication technique |
| Silicon Dioxide | SiO2 | 1610-1710 | 2.2-2.7 | 1 | — | — | ~1025 | eBeam (Xlnt) | Al2O3, Ta,
graphite, W | Swept beam is critical to avoid hole drilling, since the source material will have a shallow melt pool |
| Influenced by composition |
| Silicon Monoxide | SiO | 1702 | 2.1 | — | — | — | 850 | eBeam (fair) | W, Ta, graphite | Thin films from bulk SiO material has been reported |
| sublimes |
| Silicon Nitride | Si3N4 | — | 3.44 | — | — | — | ~800 | — | — | Thin films of Si3N3 by reactive sputter deposition have been reported |
| sublimes |
| Silicon Selenide | SiSe | — | — | — | — | — | 550 | — | — | — |
| Silicon Sulphide | SiS | — | 1.85 | — | — | — | 450 | — | — | — |
| sublimes |
| Sillicon Telluride | SiTe2 | — | 4.39 | — | — | — | 550 | — | — | — |
| Silver | Ag | 961 | 10.49 | 0.529 | 847 | 958 | 1105 | eBeam (Xlnt) | W, Al2O3, Ta,
Mo, graphite | Swept beam during melt and focused beam during deposition is recommended for higher deposition rates |
| Silver Bromide | AgBr | 432 | 6.47 | — | — | — | ~380 | — | — | — |
| Silver Chloride | AgCl | 455 | 5.56 | — | — | — | ~520 | — | — | — |
| Silver Iodide | AgI | 558 | 5.67 | — | — | — | ~500 | — | — | Thin films of AgI fabricated by thermal evaporation have been reported |
| Sodium | Na | 97 | 0.97 | — | 74 | 124 | 192 | — | quartz | Use gentle preheat to outgas. Metal reacts violently in air |
| Sodium Bromide | NaBr | 755 | 3.2 | — | — | — | ~400 | — | — | — |
| Sodium Chloride | NaCl | 801 | 2.16 | — | — | — | 530 | — | — | Thin films of NaCl fabricated by thermal evaporation in Knudsen cells with quartz crucibles have been reported |
| Sodium Cyanide | NaCN | 563 | — | — | — | — | ~550 | — | — | — |
| Sodium Fluoride | NaF | 988 | 2.79 | — | — | — | ~700 | eBeam (good) | W, Ta, graphite, BeO | Use gentle preheat to outgas. NaF thin films produced from powder source material and 230°C substrate heating have been reported |
| Sodium Hydroxide | NaOH | 318 | 2.13 | — | — | — | ~470 | — | — | — |
| Strontium | Sr | 769 | 2.6 | — | 239 | 309 | 403 | eBeam (poor) | graphite, quartz | Wets refractory metals. May react strongly in air |
| Strontium Fluoride | SrF2 | 1190 | 4.24 | — | — | — | ~1000 | eBeam (poor) | Al2O3, W, quartz | Thin films of SrF2 produced by eBeam and thermal evaporation have been reported |
| Strontium Oxide | SrO | 2460 | 4.7 | — | — | — | 1500 | eBeam (poor) | Al2O3 | Loses oxygen. Reacts with W and Mo |
| sublimes |
| Strontium Sulphide | SrS | >2000 | 3.7 | — | — | — | — | — | — | Decomposes |
| Sulphur | S8 | 115 | 2 | — | 13 | 19 | 57 | eBeam (poor) | quartz | Can contaminate vacuum systems |
| Tantalum | Ta | 2996 | 16.6 | — | 1960 | 2240 | 2590 | eBeam (Xlnt) | graphite | High melting point of Ta limits crucible liner selection. High vacuum is required to mitigate oxygen incorporation in films |
| Tantalum Boride | TaB2 | 3000 | 12.38 | — | — | — | — | — | — | — |
| Tantalum Carbide | TaC | 3880 | 14.65 | — | — | — | ~2500 | — | — | — |
| Tantalum Nitride | TaN | 3360 | 16.3 | — | — | — | — | eBeam (fair) | graphite | Thin films of TaN can be produced by reactive evaporation in 10-3 torr N
2 |
| Tantalum Pentoxide | Ta2O5 | 1800 | 8.74 | — | 1550 | 1780 | 1920 | eBeam (good) | graphite, Ta | Swept beam to avoid hole drilling. A thin Ti layer will improve adhesion to the substrate |
| Tantalum Sulphide | TaS2 | 1300 | — | — | — | — | — | — | — | — |
| Technetium | Tc | 2200 | 11.5 | — | 1570 | 1800 | 2090 | — | — | — |
| Tellurium | Te | 452 | 6.25 | — | 157 | 207 | 277 | eBeam (poor) | Al2O3, quartz, graphite | Wets refractory metals |
| Terbium | Tb | 1357 | 8.27 | — | 800 | 950 | 1150 | eBeam (Xlnt) | Al2O3, graphite, Ta | Thin films produced by sputter deposition and thermal evaporation have also been reported |
| Terbium Fluoride | TbF3 | 1176 | — | — | — | — | ~800 | — | — | Sputter deposition is preferred |
| Terbium Oxide | Tb2O3 | 2387 | 7.87 | — | — | — | 1300 | — | — | Thin films prepared by pulsed laser deposition have been reported |
| Terbium Peroxide | Tb4O7 | 2340 | 7.3 | — | — | — | — | — | — | Annealing of Tb2O3 films at 800°C in air to produce stable Tb4O7 has been reported |
| Thallium | Tl | 302 | 11.85 | — | 280 | 360 | 470 | eBeam (poor) | Al2O3, quartz, graphite | Thallium and its compounds are very toxic. Wets freely |
| Thallium Bromide | Tlbr | 480 | 7.56 | — | — | — | ~250 | — | — | Thermal evaporation of TlBr thin films has been reported |
| sublimes |
| Thallium Chloride | TlCl | 430 | 7 | — | — | — | ~150 | — | — | — |
| sublimes |
| Thallium Iodide (ß) | TlI | 440 | 7.09 | — | — | — | ~250 | eBeam (poor) | Al2O3, quartz | Low stress thin films can be produced by eBeam evaporation with a substrate temperature of 100°C |
|
| Thallium Oxide | Tl2O3 | 717 | 9.65 | — | — | — | 350 | — | — | Disproportionates at 850°C to Tl2O |
| Thorium | Th | 1875 | 11.7 | — | 1430 | 1660 | 1925 | eBeam (Xlnt) | W, Ta, Mo | Toxic and mildly radioactive |
| Thorium Bromide | ThBr4 | — | 5.67 | — | — | — | — | — | — | — |
| sublimes |
| Thorium Carbide | ThC2 | 2273 | 8.96 | — | — | — | ~2300 | — | — | — |
| Thorium Dioxide | ThO2 | 3050 | 10.03 | — | — | — | ~2100 | eBeam (good) | W | Stable stoichiometric films of ThO2 produced from powdered source material have been reported |
| Thorium Fluoride | ThF4 | 1110 | 6.3 | — | — | — | ~750 | eBeam (fair) | Ta, Mo, graphite | Use gentle preheat to outgas. Substrate temperature of 175°C improves film adhesion and quality |
| Thorium Oxyfluoride | ThOF2 | 900 | 9.1 | — | — | — | — | eBeam (poor) | W, Ta, Mo,
graphite | Does not evaporate stoichiometrically, resulting films are primarily ThF4 |
| Thorium Sulphide | ThS2 | — | 6.8 | — | — | — | — | — | — | — |
| Thulium | Tm | 1545 | 9.32 | — | 461 | 554 | 680 | eBeam (good) | Al2O3 | — |
| sublimes |
| Thulium Oxide | Tm2O3 | — | 8.9 | — | — | — | 1500 | — | — | Thin films of Tm2O3 by eBeam evaporation and MBE have been reported |
| Tin | Sn | 232 | 7.75 | 0.724 | 682 | 807 | 997 | eBeam (Xlnt) | Al2O3, Ta,
graphite, W | High deposition rates possible, but uniformity may suffer. Slow power ramp to mitigate cavitation of melt pool |
| Tin Oxide | SnO2 | 1127 | 6.95 | — | — | — | ~1000 | eBeam (Xlnt) | Al2O3, quartz | Substrate temperature above 200°C improves film crystallinity |
| sublimes |
| Tin Selenide | SnSe | 861 | 6.18 | — | — | — | ~400 | — | — | Stoichiometric thin films of SnSe produced by thermal evaporation of powdered source material have been reported |
| Tin Sulphide | SnS | 882 | 5.08 | — | — | — | ~450 | eBeam (poor) | quartz, W | Thin films prepared by eBeam evaporation of SnS powder and reactive co-evaporation of Sn and S have been reported |
| Tin Telluride | SnTe | 780 | 6.44 | — | — | — | ~450 | eBeam (poor) | quartz | Thin films of SnTe produced with eBeam evaporation at a substrate temperature of 300°C have been reported |
| Titanium | Ti | 1675 | 4.5 | 0.628 | 1067 | 1235 | 1453 | eBeam (Xlnt) | W, graphite, TiC | Films are very adherent to almost any substrate |
| Titanium Boride | TiB2 | 2980 | 4.5 | — | — | — | — | — | — | Sputter deposition is the preferred thin film fabrication technique |
| Titanium Carbide | TiC | 3140 | 4.93 | — | — | — | ~2300 | eBeam (fair) | W, graphite | eBeam evaporation of TiC thin films with and without ion beam assistance have been reported |
| Titanium Dioxide | TiO2 | 1640 | 4.29 | — | — | — | ~1300 | eBeam (good) | W, graphite, Ta | Stoichiometric thin films of TiO2 have been produced from powder source material and a substrate temperature of 600°C |
| Titanium Monoxide | TiO | 1750 | — | — | — | — | ~1500 | eBeam (good) | W, graphite, Ta | Outgas with gentle preheat prior to deposition |
| Titanium Nitride | TiN | 2930 | 5.43 | — | — | — | — | eBeam (good) | W, graphite, TiC | Thin films have been prepared by reactive evaporation of Ti in N2 partial pressure |
| Titanium Sesquioxide | Ti2O3 | 2130 | 4.6 | — | — | — | — | eBeam (good) | W, Ta, graphite | Stoichiometric films have been produced by reactive evaporation of Ti O powder in 2.5 x 10-4 torr O
2 3 2 |
| Tungsten | W | 3410 | 19.3 | 0.163 | 2117 | 2407 | 2757 | eBeam (good) | W | Long, slow preheat is required to condition the source material. Raster the electron beam to avoid hole drilling |
| Tungsten Boride | WB2 | 2900 | 12.75 | — | — | — | — | — | — | — |
| Tungsten Carbide | W2C | 2860 | 17.15 | — | 1480 | 1720 | 2120 | eBeam (good) | W, graphite | Thin films prepared by eBeam evaporation of powdered source material have been reported. RF Sputter deposition is widely reported |
| Tungsten Telluride | WTe3 | — | 9.49 | — | — | — | — | — | — | — |
| Tungsten Trioxide | WO3 | 1473 | 7.16 | — | — | — | 980 | eBeam (good) | W | Thin films are most commonly prepared using WO3 powder source material |
| sublimes |
| Uranium | U | 1132 | 19.07 | — | 1132 | 1327 | 1582 | eBeam (good) | W, Mo, graphite | Depleted uranium thin films oxidize easily even in low partial pressure of O2 |
| Uranium Carbide | UC2 | 2260 | 11.28 | — | — | — | 2100 | — | — | — |
| Uranium Dioxide | UO2 | 2176 | 10.9 | — | — | — | — | eBeam (fair) | W | Stoichiometric thin films produced by reactive evaporation of depleted uranium in O2 partial pressure have been reported |
| Uranium Fluoride | UF4 | ~1000 | — | — | — | — | 300 | — | — | Thin films fabricated by sputter deposition of depleted uranium by F– ions has been reported |
| Uranium Oxide | U3O8 | Decomposes | 8.3 | — | — | — | — | — | — | Thin films produced by reactive sputter deposition of depleted uranium targets in O2 have been reported. |
| Uranium Phosphide | UP2 | — | 8.57 | — | — | — | 1200 | — | — | — |
| Uranium Sulphide | U2S3 | — | — | — | — | — | 1400 | — | — | — |
| Vanadium | V | 1890 | 5.96 | — | 1162 | 1332 | 1547 | eBeam (Xlnt) | W, graphite, Ta | Wets Mo. eBeam evaporation is preferred |
| Vanadium Boride | VB2 | 2400 | 5.1 | — | — | — | — | — | — | — |
| Vanadium Carbide | VC | 2810 | 5.77 | — | — | — | ~1800 | — | — | — |
| Vanadium Dioxide | VO2 | 1967 | 4.34 | — | — | — | ~575 | eBeam (poor) | W, graphite | Difficult to maintain stoichiometry by eBeam evaporation, sputter deposition is preferred |
| sublimes |
| Vanadium Nitride | VN | 2320 | 6.13 | — | — | — | — | — | — | — |
| Vanadium Pentoxide | V2O5 | 690 | 3.36 | — | — | — | ~500 | eBeam (good) | W, graphite | Thin films prepared from powdered source material are nearly stoichiometric. Post process annealing at 280° in O2 restores full stoichiometry |
| Vanadium Silicide | VSi2 | 1700 | 4.42 | — | — | — | — | — | — | — |
| Ytterbium | Yb | 824 | 6.98 | — | 520 | 590 | 690 | eBeam (good) | Al2O3, W, Ta | Store Yb evaporation source material in N2 desiccator to mitigate oxidation |
| sublimes |
| Ytterbium Fluoride | YbF3 | 1157 | 8.17 | — | — | — | ~800 | eBeam (fair) | Ta, Mo, W | Preheat slowly and evaporate at
≤ 10Å/sec to mitigate dissociation |
| Ytterbium Oxide | Yb2O3 | 2346 | 9.17 | — | — | — | ~1500 | eBeam (fair) | Al2O3, W, Ta | Thin films produced by reactive evaporation in 8 x 10-5 torr O have
2
been reported. |
| sublimes |
| Yttrium | Y | 1509 | 4.48 | — | 830 | 973 | 1157 | eBeam (Xlnt) | W, Al2O3 | Substrate heating at 300°C improves adhesion and film smoothness |
| Yttrium Aluminum Oxide | Y3Al5O12 | 1990 | — | — | — | — | — | eBeam (good) | W, Al2O3 | Films prepared from powdered source material, typically with dopants. YAG films post deposition annealed at 1100°C in vacuum improves crystallinity |
| Yttrium Fluoride | YF3 | 1387 | 4.01 | — | — | — | — | eBeam (good) | W, Ta, Mo, Al2O3 | eBeam evaporation at a rate of
≤ 10Å/sec and substrate temperature of 200°C produces crystalline films with good adhesion |
| Yttrium Oxide | Y2O3 | 2680 | 4.84 | — | — | — | ~2000 | eBeam (good) | graphite, W | eBeam evaporated films can be oxygen deficient, post deposition annealing
in 10-3 torr O at 525°C results in
2
stoichiometric films. |
| sublimes |
| Zinc | Zn | 419 | 7.14 | 0.514 | 127 | 177 | 250 | eBeam (Xlnt) | W, Al2O3, quartz, graphite | Evaporates well under a wide range of conditions |
| Zinc Antimonide | Zn3Sb2 | 546 | 6.3 | — | — | — | — | — | — | — |
| Zinc Bromide | ZnBr2 | 394 | 4.22 | — | — | — | ~300 | — | — | — |
| Zinc Fluoride | ZnF2 | 87 | 4.84 | — | — | — | ~800 | eBeam (fair) | quartz, W | Thin films prepared by eBeam evaporation of powdered source material have been reported. Substrate heating at 400°C improved crystallinity |
| Zinc Nitride | Zn3N2 | — | 6.22 | — | — | — | — | — | — | Reactive sputter deposition in N2 has been reported |
| Zinc Oxide | ZnO | 1975 | 5.61 | — | — | — | ~1800 | eBeam (fair) | quartz, W | Quality thin films fabricated using eBeam evaporation at a rate of 8Å/sec and a substrate temperature of 300°C has been reported |
| Zinc Selenide | ZnSe | 1526 | 5.42 | — | — | — | 660 | eBeam (fair) | W, Ta, Mo,
quartz | Deposition rate of ≤ 5 Å/sec. Thin films are polycrystalline and a substrate temperature of 300°C improves adhesion and size of crystallites |
| Zinc Sulphide | ZnS | 1830 | 4.09 | — | — | — | ~800 | eBeam (good) | W, Ta, Mo,
quartz | Thin films produced by eBeam evaporation display a preferred (111) orientation and best optical properties result from a 400°C substrate temperature |
| sublimes |
| Zinc Telluride | ZnTe | 1238 | 6.34 | — | — | — | ~600 | eBeam (fair) | W, Ta, Mo,
quartz | Stoichiometric thin films produced by eBeam evaporation have good
crystallinity with a substrate temperature of 230°C. Optical properties are thickness dependent |
| Zircon | ZrSiO4 | 2550 | 4.56 | — | — | — | — | — | — | — |
| Zirconium | Zr | 1852 | 6.4 | — | 1477 | 1702 | 1987 | eBeam (Xlnt) | W, quartz | Alloys with W. Thin films oxidize readily |
| Zirconium Boride | ZrB2 | 3040 | 6.08 | — | — | — | — | eBeam (good) | W, quartz | Stoichiometric films prepared by
co-evaporation of Zr and B have been reported |
| Zirconium Carbide | ZrC | 3540 | 6.73 | — | — | — | ~2500 | eBeam (poor) | graphite | Quality thin films of ZrC using pulsed laser deposition have been reported |
| Zirconium Nitride | ZrN | 2980 | 7.09 | — | — | — | — | — | — | Thin films of ZrN prepared by N2 ion assisted evaporation of Zr have been reported |
| Zirconium Oxide | ZrO2 | 2700 | 5.49 | — | — | — | ~220 | eBeam (good) | W, graphite | Reactive evaporation in 10-3 torr O
2
produce as deposited stoichiometric
films. For eBeam evaporated films, post deposition annealing in O2 restores stoichiometry |
| Zirconium Silicide | ZrSi2 | 1700 | 4.88 | — | — | — | — | — | — | eBeam evaporated Zr on Si substrates forms ZrSi2 following post deposition thermal annealing at 600°C |
