Thin Film Evaporation Guide / Rev. 2023

Material	Symbol	Melting Point °C	Density	Z-ratio	Temperature °C @ Vapor Pressure (Torr)			Evaporation Method	Crucible Liner	Remarks
Aluminum	Al	660	2.7	1.08	677	821	1010	eBeam (Xlnt)	TiB2-TiC, TiB2-BN, graphite, BN	High deposition rates possible. Al wets IMCS
Aluminum Antimonide	AlSb	1080	4.3	—	—	—	—	eBeam (fair)	TiB2-BN, BN, C, Al2O3	Co-evaporation is the best approach
Aluminum Arsenide	AlAs	1600	3.7	—	—	—	~1300	eBeam (poor)	TiB2-BN, BN, Al2O3	Co-evaporation can work but typically done with MBE
Aluminum Bromide	AlBr3	97	3.01	—	—	—	~50	eBeam (poor)	graphite, W	eBeam or thermal evaporation of anhydrous AlBr3 powder
Aluminum Carbide	Al4C3	1400	2.36	—	—	—	~800	eBeam (fair)	graphite, W	eBeam evaporation from powder, but CVD is a better approach
Aluminum 2% Copper	Al2%Cu	640	2.8	—	—	—	—	eBeam (fair)	TiB2-TiC, BN	eBeam evaporation of Al-Cu alloys is possible, but sputter deposition is a better approach
Aluminum Fluoride	AlF3	1257	3.07	—	410	490	700	eBeam (fair)	graphite, Mo, W	Films tend to be porous, but smooth
		sublimes			sublimes
Aluminum Nitride	AlN	—	3.26	—	—	—	~1750	eBeam (fair)	TiB2-TiC, graphite, BN	Reactive evaporation of Al in N2 or ammonia partial pressure
		sublimes
Aluminum Oxide (Alumina)	Al2O3	2045	3.97	0.336	—	—	1550	eBeam (Xlnt)	W, graphite	Swept beam with low deposition rates (< 3 Å/sec)
Aluminum 2% Silicon	Al2%Si	640	2.6	—	—	—	1010	eBeam (fair)	TiB2-TiC, BN	eBeam evaporation of Al-Si alloys is possible, but sputter deposition is a better approach
Antimony	Sb	630	6.68	—	279	345	425	eBeam (fair)	BN, graphite, Al2O3	As the deposition rate is increased from 3-5 Å/s the grain size decreases and film coverage improves
					sublimes
Antimony Telluride	Sb2Te3	619	6.5	—	—	—	600	eBeam (fair)	graphite, BN, W	Best results are achieved with powdered source material, relatively high deposition rates can be achieved
Antimony Trioxide	Sb2O3	656	5.2 or 5.76	—	—	—	~300	eBeam (good)	BN, Al2O3	eBeam evaporation from powder or granules
					sublimes
Antimony Triselenide	Sb2Se3	611	—	—	—	—	—	eBeam (fair)	graphite	Can be co-evaporated with Se to overcome variable stoichiometric effects
Antimony Trisulphide	Sb2S3	550	4.64	—	—	—	~200	eBeam (good)	Al2O3, Mo, Ta	Films without substrate heating are amorphous, while polycrystalline films form on heated substrates
Arsenic	As	814	5.73	—	107	150	210	eBeam (poor)	Al2O3, BeO, graphite	Sputter deposition is the preferred method for deposition of elemental arsenic
Arsenic Selenide	As2Se3	360	4.75	—	—	—	—	eBeam (poor)	Al2O3, quartz	Deposition efficiency increases with deposition rate
Arsenic Trisulphide	As2S3	300	3.43	—	—	—	~400	eBeam (fair)	Al2O3, quartz, Mo	Thin films tend to be richer in As compared to the source material
Arsenic Tritelluride	As2Te3	362	—	—	—	—	—	eBeam (poor)	Al2O3, quartz	CVD is the preferred deposition technique for this material
Barium	Ba	710	3.78	—	545	627	735	eBeam (fair)	W, Ta, Mo	Reacts with ceramics. Ba evaporation pellets are often shipped with protective coatings which must be removed
Barium Chloride	BaCl2	962	3.86	—	—	—	~650	eBeam (poor)	W, Mo	Swept beam and slow power ramp to precondition and outgas the source material
Barium Fluoride	BaF2	1280	4.83	—	—	—	~700	eBeam (fair)	W, Mo	Better consistency in refractive index is achieved via CVD
					sublimes
Barium Oxide	BaO	1923	5.72 or 5.32	—	—	—	~1300	eBeam (fair)	Al2O3, quartz	Swept beam and slow power ramp to precondition and outgas the source material
Barium Sulphide	BaS	2200	4.25	—	—	—	1100	eBeam (poor)	W, Mo	Sputter deposition is the preferred deposition technique
Barium Titanate	BaTiO3	Decomposes	6	—	Decomposes			eBeam (poor)	W, Mo	BaTiO3 will decompose as single source. Co-evaporate with Ti to maintain Ba/Ti ratio
Beryllium	Be	1278	1.85	—	710	878	1000	eBeam (Xlnt)	graphite	Very high deposition rates are possible. Avoid Be powder sources due to toxicity
Beryllium Chloride	BeCl2	440	1.9	—	—	—	~150	eBeam (poor)	graphite	CVD is the preferred deposition technique for this material
Beryllium Fluoride	BeF2	800	1.99	—	—	—	~200	eBeam (fair)	graphite	Avoid powder sources due to toxicity
					sublimes
Beryllium Oxide	BeO	2530	3.01	—	—	—	1900	eBeam (fair)	graphite, Al2O3	Thin films can also be produced via reactive evaporation of Be with O2
Bismuth	Bi	271	9.8	—	330	410	520	eBeam (Xlnt)	Al2O3, graphite	Post deposition thermal annealing significantly enhances film properties. However, vapors are toxic
Bismuth Fluoride	BiF3	727	8.75	—	—	—	~300	eBeam (poor)	graphite	Sublimes at relatively low temperature, so reasonable vapor pressure can be achieved
					sublimes
Bismuth Oxide	Bi2O3	820	8.9	—	—	—	~1400	eBeam (poor)	—	eBeam evaporation from Bi2O3 source is possible, but variations in thin film stoichiometry may occur
Bismuth Selenide	Bi2Se3	710	7.66	—	—	—	~650	eBeam (fair)	graphite, quartz	Sputter deposition is preferred, but co-evaporation using Bi and Se sources is possible
Bismuth Telluride	Bi2Te3	585	7.85	—	—	—	~600	eBeam (fair)	graphite, quartz	Sputter deposition is preferred, but co-evaporation using Bi and Te sources is possible
Bismuth Titanate	Bi2Ti2O7	—	—	—	Decomposes			eBeam (poor)	graphite, quartz	Decomposes when evaporated. Sputter deposition is preferred, but can be reactively co-evaporated in O2 partial pressure
Bismuth Trisulphide	Bi2S3	685	7.39	—	—	—	—	eBeam (poor)	graphite, W	Can be co-evaporated from Bi and S sources
Boron	B	2100	2.36	0.389	1278	1548	1797	eBeam (Xlnt)	graphite, W	Can react with graphite and tungsten crucible liners. Requires high power to evaporate
					sublimes
Boron Carbide	B4C	2350	2.5	—	2500	2580	2650	eBeam (good)	graphite, W	Ion assisted eBeam deposition with Ar can improve film adhesion
Boron Nitride	BN	2300	2.2	—	—	—	~1600	eBeam (poor)	graphite, W	Ion assisted eBeam deposition with N2 produces stoichiometric thin films, but sputter deposition is preferred
					sublimes
Boron Oxide	B2O3	460	1.82	—	—	—	~1400	eBeam (good)	W, Mo	eBeam evaporation from bulk source material produces stoichiometric thin films
Boron Trisulphide	B2S3	310	1.55	—	—	—	800	eBeam (poor)	graphite	—
Cadmium	Cd	321	8.64	—	64	120	180	eBeam (fair)	Al2O3, quartz	Dedicated system is recommended, since Cd can contaminate other purity sensitive depositions
Cadmium Antimonide	CdSb	456	6.92	—	—	—	—	—	—	—
Cadmium Arsenide	Cd3As2	721	6.21	—	—	—	—	eBeam (poor)	quartz	Thin films can be produced by eBeam evaporation from bulk source material, but CVD is a preferred deposition method
Cadmium Bromide	CdBr2	567	5.19	—	—	—	~300	—	—	—
Cadmium Chloride	CdCl2	570	4.05	—	—	—	~400	—	—	—
Cadmium Fluoride	CdF2	1070	5.64	—	—	—	~500	—	—	—
Cadmium Iodide	CdI2	400	5.3	—	—	—	~250	—	—	CdI2 films have been deposited by thermal evaporation on glass substrates using stoichiometric powders
Cadmium Oxide	CdO	900	6.95	—	—	—	~530	eBeam (poor)	Al2O3, quartz	Can be produced by reactive evaporation of Cd in partial pressure of O2 or reactive sputtering with O2
Cadmium Selenide	CdSe	1264	5.81	—	—	—	540	eBeam (good)	Al2O3, quartz, graphite	eBeam evaporation from bulk source material produces uniform films
Cadmium Siliside	CdSiO2	—	—	—	—	—	~600	—	—	Reports in the literature of deposition by CVD
Cadmium Sulphide	CdS	1750	4.82	—	—	—	550	eBeam (fair)	Al2O3, quartz, graphite	Substrate heating improves film adhesion. Deposition rates of 15 Å/sec are possible
					sublimes
Cadmium Telluride	CdTe	1098	6.2	—	—	—	450	eBeam (fair)	Al2O3, quartz, graphite	High quality CdTe thin films on glass substrates at 100°C have been fabricated with eBeam deposition
Calcium	Ca	842	1.56	—	272	357	459	eBeam (poor)	Al2O3, quartz	Low partial pressure of O2 in the vacuum chamber is required to avoid oxidizing the Ca
					sublimes
Calcium Fluoride	CaF2	1360	3.18	—	—	—	~1100	eBeam (Xlnt)	quartz, Ta	Deposition rate of 20 Å/sec are easily achieved with eBeam deposition. Substrate heating improves film quality
Calcium Oxide	CaO	2580	3.35	—	—	—	~1700	eBeam (poor)	ZrO2, graphite	Forms volatile oxides with W and Mo
Calcium Silicate	CaO-SiO2	1540	2.9	—	—	—	—	eBeam (good)	quartz	Post deposition thermal annealing at 500°C improves film quality and adhesion
Calcium Sulphide	CaS	—	2.18	—	—	—	1100	eBeam (poor)	ZrO2, graphite	Decomposition of CaS bulk source material can be overcome by co- evaporation with S
		sublimes
Calcium Titanate	CaTiO3	1975	4.1	—	1490	1600	1690	eBeam (poor)	—	Sputter deposition is the preferred method
Calcium Tungstate	CaWO4	1620	6.06	—	—	—	—	eBeam (good)	W, ZrO2	Substrate heating improves the crystallinity of the deposit
Carbon (diamond)	C	—	1.8-2.3	0.22	1657	1867	2137	eBeam (Xlnt)	graphite, W	Better film adhesion results from eBeam evaporation compared to vacuum arc deposition
		sublimes			sublimes
Cerium	Ce	795	8.23	—	970	1150	1380	eBeam (good)	Al2O3, BeO, graphite	Ce deposits readily oxidize when exposed to air
Ceric Oxide	CeO2	2600	7.3	—	1890	2000	2310	eBeam (good)	graphite, Ta	Stoichiometric films are best achieved using reactive evaporation with O2. Substrate heating improves film quality
					sublimes
Cerium Fluoride	CeF3	1418	6.16	—	—	—	~900	eBeam (good)	Mo, Ta, W	Can be produced using bulk source material. Substrate heating from 150-300°C improves adhesion and film quality
Cerium Oxide	Ce2O3	1692	6.87	—	—	—	—	eBeam (fair)	graphite, Ta	Mixed CeO2-Ce2O3 films can be reduced to Ce2O3 by heating in UHV at 725°C
Cesium	Cs	28	1.87	—	-16	22	30	eBeam (poor)	quartz	—
Cesium Bromide	CsBr	636	4.44	—	—	—	~400	—	—	—
Cesium Chloride	CsCl	646	3.97	—	—	—	~500	—	—	—
Cesium Fluoride	CsF	684	3.59	—	—	—	~500	—	—	—
Cesium Hydroxide	CsOH	272	3.67	—	—	—	~550	—	—	—
Cesium Iodide	CsI	621	4.51	—	—	—	~500	eBeam (poor)	quartz, Pt	Stoichiometric CsI films are possible from bulk, source material, but good film coverage can be a challenge
Chiolote	Na5Al3F14	—	2.9	—	—	—	~800	eBeam (poor)	Al2O3	Stoichiometric chiolite films are difficult to fabricate with eBeam evaporation
Chromium	Cr	1890	7.2	0.305	837	977	1157	eBeam (good)	W, graphite	Films are very adherent. High deposition rates possible, but uniformity can be an issue
					sublimes
Chromium Boride	CrB	2760	6.17	—	—	—	—	—	—	—
Chromium Bromide	CrBr2	842	4.36	—	—	—	550	—	—	—
Chromium Carbide	Cr3C2	1890	6.68	—	—	—	~2000	eBeam (fair)	W	Can be fabricated by co-evaporation of Cr and C
Chromium Chloride	CrCl2	824	2.75	—	—	—	550	—	—	—
Chromium Oxide	Cr2O3	2435	5.21	—	—	—	~2000	eBeam (good)	W	Stoichiometry can be maintained by reactive evaporation in O2
Chromium Siliside	Cr3Si	1710	6.51	—	—	—	—	—	—	—
Chromium Silicon Monoxide	Cr-SiO	Influenced by Composition						eBeam (good)	W	The quality Cr-SiO cermet films fabricated with eBeam evaporation improves with annealing at 425° C
Cobalt	Co	1495	8.9	—	850	990	1200	eBeam (Xlnt)	Al2O3, BeO, graphite	Pellets or powder both work well as source material
Cobalt Bromide	CoBr2	678	4.91	—	—	—	400	—	—	—
					sublimes
Cobalt Chloride	CoCl2	740	3.36	—	—	—	472	—	—	—
					sublimes
Cobalt Oxide	CoO	1935	5.68	—	—	—	—	eBeam (fair)	—	CoO can be fabricated by reactive evaporation with O2, but sputter deposition is the preferred fabrication method
Copper	Cu	1083	8.92	0.437	727	857	1017	eBeam (Xlnt)	Al2O3, Mo Ta, graphite	Poor adhesion on most substrates. Use thin adhesion layer of Cr or Ti
Copper Chloride	CuCl	422	3.53	—	—	—	~600	eBeam (poor)	quartz	Stoichiometric CuCl films have been produced from pellets and powder source material
Copper Oxide	Cu2O	1235	6	—	—	—	~600	eBeam (good)	graphite, Al2O3, Ta	Thin films have been fabricated from stoichiometric Cu2O powder
					sublimes
Copper Sulfide	CuS	1113	6.75	—	—	—	~500	—	—	—
					sublimes
Cryolite	Na3AlF6	1000	2.9	—	1020	1260	1480	eBeam (good)	W, graphite	Good films can be fabricated using pellets or powder source material.
Dyprosium	Dy	1409	8.54	—	625	750	900	eBeam (good)	W	Quality thin films can be fabricated from bulk source material
Dyprosium Fluoride	DyF3	1360	6	—	—	—	~800	eBeam (good)	W, Ta	Bulk source material is available in pellets and powder form
					sublimes
Dyprosium Oxide	Dy2O3	2340	7.81	—	—	—	~1400	eBeam (fair)	W	Thin films have been fabricated from bulk source material
Erbium	Er	1497	9.06	0.74	650	775	930	eBeam (good)	W, Ta	—
					sublimes
Erbium Fluoride	ErF2	1380	6.5	—	—	—	~950	—	—	—
Erbium Oxide	Er2O3	2400	8.64	—	—	—	~1600	eBeam (fair)	W	Reactive evaporation of bulk material in O2 atmosphere maintains stoichiometry.
Europium	Eu	822	5.26	—	280	360	480	eBeam (fair)	Al2O3	—
					sublimes
Europium Fluoride	EuF2	1380	6.5	—	—	—	~950	—	—	—
Europium Oxide	Eu2O3	2400	8.64	—	—	—	~1600	eBeam (good)	W	Reactive evaporation of Eu2O3 powder or granules in O2 atmosphere maintains stoichiometry.
Europium Sulphide	EuS	—	5.75	—	—	—	—	eBeam (good)	W	eBeam evaporation of EuS powder in UHV (10-8 torr base vacuum) has been reported in the literature
Gadolinium	Gd	1312	7.89	—	760	900	1175	eBeam (Xlnt)	Al203, W	eBeam evaporation of Gd directly from the water cooled Cu hearth has been reported
Gadolinium Oxide	Gd2O3	2310	7.41	—	—	—	—	eBeam (fair)	Al203, W	Reactive evaporation of Gd2O3 pellets in O2 maintains thin film stoichiometry. Refractive index increases with substrate heating
Gallium	Ga	30	5.9	—	619	742	907	eBeam (good)	graphite, Al2O3, BeO, quartz	Alloys with refractory metals
Gallium Antimonide	GaSb	710	5.6	—	—	—	—	eBeam (fair)	W, Ta	eBeam evaporation from bulk source material is possible
Gallium Arsenide	GaAs	1238	5.3	—	—	—	—	eBeam (good)	graphite, W	Film quality is improved with ion assisted evaporation
Gallium Nitride	GaN	—	6.1	—	—	—	~200	eBeam (fair)	graphite, Al2O3, BeO, quartz	Reactive evaporation of Ga in 10-3 N 2
		sublimes
Gallium Oxide (ß)	Ga2O3	1900	5.88	—	—	—	—	eBeam (fair)	graphite, W	Reactive evaporation of Ga2O3 in O2 partial pressure maintains stoichiometry
Gallum Phosphide	GaP	1540	4.1	—	—	770	920	eBeam (fair)	quartz, W	Co-evaporation of Ga and P has been reported
Gemanium	Ge	937	5.35	0.516	812	957	1167	eBeam (Xlnt)	Al2O3, quartz, graphite, Ni	Uniform films achieved with slow power ramp and swept beam
Germanium Nitride	Ge3N2	450	5.2	—	—	—	~650	eBeam (poor)	—	Sputtering is the preferred method of fabrication
					sublimes
Germanium Oxide	GeO2	1086	6.24	—	—	—	~625	eBeam (good)	graphite, Al2O3, quartz	GeO2 stoichiometry can be maintained by reactive evaporation of bulk source material in O2
Germanium Telluride	GeTe	725	6.2	—	—	—	381	—	—	—
Gold	Au	1062	19.32	0.381	807	947	1132	eBeam (Xlnt)	W, Al2O3, graphite, BN	Metal spitting can be an issue. Mitigate by slow power ramp with swept beam and low carbon content in source material
Hafnium	Hf	2230	13.09	—	2160	2250	3090	eBeam (good)	W	—
Hafnium Boride	HfB2	3250	10.5	—	—	—	—	—	—	Fabrication of HfB2 films by CVD has been reported
Hafnium Carbide	HfC	4160	12.2	—	—	—	~2600	—	—	—
					sublimes
Hafnium Nitride	HfN	2852	13.8	—	—	—	—	—	—	HfN films have been produced by reactive RF sputtering of Hf in N2 + Ar
Hafnium Oxide	HfO2	2812	9.68	—	—	—	~2500	eBeam (fair)	graphite, W	Can be fabricated by reactive evaporation in O2 or using bulk source material. Post process annealing at 500°C improves film quality
Hafnium Silicide	HfSi2	1750	7.2	—	—	—	—	eBeam (fair)	W	HfSi2 thin films have been fabricated by eBeam evaporation of Hf on Si substrates followed by annealing at 750°C for an hour
Holmium	Ho	1470	8.8	—	650	770	950	eBeam (good)	W	—
					sublimes
Holmium Fluoride	HoF3	1143	7.64	—	—	—	~800	—	quartz	—
Holmium Oxide	Ho2O3	2370	8.41	—	—	—	—	eBeam (fair)	W	Ho2O3 thin films have been fabricated by eBeam evaporation of powdered source material or reactive evaporation of Ho in O2
Indium	In	157	7.3	0.841	487	597	742	eBeam (Xlnt)	Mo, graphite, Al2O3	Wets Cu and W. Mo liner is preferred
Indium Antimonide	InSb	535	5.8	—	500	—	~400	eBeam (fair)	graphite, W	Thin films fabricated using powdered source material
Indium Arsenide	InAs	943	5.7	—	780	870	970	—	—	Sputter deposition is the preferred thin film fabrication technique
Indium Oxide	In2O3	1565	7.18	—	—	—	~1200	eBeam (good)	Al2O3	Thin films have been produced by reactive evaporation of powdered In2O3 in O2 partial pressure.
					sublimes
Indium Phosphide	InP	1058	4.8	—	—	630	730	eBeam (fair)	graphite, W	Deposits are P rich
Indium Selenide	In2Se3	890	5.7	—	—	—	—	eBeam (fair)	graphite, W	Thin films have been fabricated by eBeam evaporation from powdered InSe. Post process annealing improves crystallinity
Indium Sesquisulphide	In2S3	1050	4,9	—	—	—	850	—	—	—
					sublimes
Indium Sulphide	In2S	653	5.87	—	—	—	650	—	—	—
Indium Telluride	In2Te3	667	5.8	—	—	—	—	—	—	Thin films from co-evaporation of In and Te sources has been reported.
Indium Tin Oxide	In2O3– SnO2	1800	6.43-7.14	—	—	—	—	eBeam (good)	graphite	Thin films have been produced from 90% In2O3-10%SnO2 powder in O2 partial pressure. Substrate temperature of 250°C improves electrical conductivity of resulting films
Iridium	Ir	2459	22.65	—	1850	2080	2380	eBeam (fair)	W	Better uniformity and adhesion can be achieved using sputter deposition
Iron	Fe	1535	7.86	0.349	858	998	1180	eBeam (Xlnt)	Al2O3, BeO, graphite	Molten Fe will attack and adhere to graphite, severely limiting crucible liner life
Iron Bromide	FeBr2	689	4.64	—	—	—	561	—	—	—
Iron Chloride	FeCl2	670	2.98	—	—	—	300	—	—	—
					sublimes
Iron Iodide	FeI2	592	5.31	—	—	—	400	—	—	—
Iron Oxide	FeO	1425	5.7	—	—	—	—	eBeam (poor)	—	Sputter deposition preferred.
Iron Oxide	Fe2O3	1565	5.24	—	—	—	—	eBeam (good)	Al2O3, BeO, graphite	Fe2O3 thin films fabricated by reactive evaporation of Fe in 0.1 Pa O2 partial pressure has been reported
Iron Sulphide	FeS	1195	4.84	—	—	—	—	—	—	—
Lanthanum	La	920	6.17	—	990	1212	1388	eBeam (Xlnt)	W, Ta	—
Lanthanum Boride	LaB6	2210	2.61	—	—	—	—	eBeam (fair)	—	LaB6 films and coatings are more commonly produced with sputter deposition.
Lanthanum Bromide	LaBr3	783	5.06	—	—	—	—	—	—	—
Lanthanum Fluoride	LaF3	1490	6	—	—	—	900	eBeam (good)	Ta, Mo	Ion assisted eBeam evaporation improves film density and adhesion
					sublimes
Lanthanum Oxide	La2O3	2250	5.84	—	—	—	1400	eBeam (good)	W, graphite	C contamination can occur with graphite crucible liners
Lead	Pb	328	11.34	1.13	342	427	497	eBeam (Xlnt)	Al2O3, quartz, graphite, W	—
Lead Bromide	PbBr2	373	6.66	—	—	—	~300	—	—	—
Lead Chloride	PbCl2	501	5.85	—	—	—	~325	—	—	—
Lead Fluoride	PbF2	822	8.24	—	—	—	~400	—	—	—
					sublimes
Lead Iodide	PbI2	502	6.16	—	—	—	~500	—	—	—
Lead Oxide	PbO	890	9.53	—	—	—	~550	eBeam (fair)	Al2O3, quartz, W	Stoichiometric PbO thin films can be produced using powdered source material
Lead Stannate	PbSnO3	1115	8.1	—	670	780	905	eBeam (poor)	Al2O3, W	Disproportionates
Lead Selenide	PbSe	1065	8.1	—	—	—	~500	eBeam (fair)	Al2O3, graphite	—
					sublimes
Lead Sulphide	PbS	1114	7.5	—	—	—	550	eBeam (fair)	Al2O3, quartz	Post deposition annealing at 150°C improves the crystallinity of the films
					sublimes
Lead Telluride	PbTe	917	8.16	—	780	910	1050	eBeam (poor)	Al2O3, graphite	Films produced from bulk PbTe tend to be Te rich. Sputter deposition is preferred
Lead Titanate	PbTiO3	—	7.52	—	—	—	—	eBeam (fair)	W, Ta	Thin films of PbTiO3 with reactive co- evaporation of PbO powder and TiO2 pellets in O2 partial pressure has been reported
Lithium	Li	179	0.53	—	227	307	407	eBeam (good)	Ta, Al2O3, BeO	Li films oxidize readily in air
Lithium Bromide	LiBr	547	3.46	—	—	—	~500	—	—	—
Lithium Chloride	LiCl	613	2.07	—	—	—	400	—	—	—
Lithium Fluoride	LiF	870	2.6	—	875	1020	1180	eBeam (good)	W, Mo, Ta, Al2O3	Rate control important for optical films. Outgas prior to deposition rastered beam
Lithium Iodide	LiI	446	4.06	—	—	—	400	—	—	—
Lithium Oxide	Li2O	1427	2.01	—	—	—	850	—	—	—
Lutetium	Lu	1652	9.84	—	—	—	1300	eBeam (Xlnt)	Al2O3	—
Lutetuim Oxide	Lu2O3	2489	9.81	—	—	—	1400	eBeam (fair)	Al2O3	eBeam evaporation of powdered source material results in stoichiometric films by post deposition rapid thermal anneal in O2 at 400-600°C
Magnesium	Mg	651	1.74	—	185	247	327	eBeam (good)	W, graphite, Al2O3	Powder is flammable. High deposition rates are possible
					sublimes
Magnesium Aluminate	MgAl2O4	2135	3.6	—	—	—	—	—	—	eBeam deposition from MgAl2O4 powder has been reported
Magnesium Bromide	MgBr2	700	3.72	—	—	—	~450	—	—	—
Magnesium Chloride	MgCl2	708	2.32	—	—	—	400	—	—	—
Magnesium Fluoride	MgF2	1266	2.9-3.2	—	—	—	1000	eBeam (Xlnt)	Al2O3, graphite, Mo	Best optical properties result from substrate heating at 300°C and a deposition rate of ≤ 5 Å/sec
Magnesium Iodide	MgI2	700	4.24	—	—	—	200	—	—	—
Magnesium Oxide	MgO	2800	3.58	—	—	—	1300	eBeam (good)	Al2O3, graphite	Stoichiometric films result from reactive evaporation in partial pressure of 10-3 torr O2
Manganese	Mn	1244	7.2	—	507	572	647	eBeam (good)	W, Al2O3, BeO	—
					sublimes
Manganese Bromide	MnBr2	695	4.38	—	—	—	500	—	—	—
Manganese Chloride	MnCl2	650	2.98	—	—	—	450	—	—	—
Manganese IV Oxide	MnO2	535	5.03	—	—	—	—	eBeam (poor)	W, Mo, Al2O3	Stoichiometric thin films have been produced by reactive evaporation of Mn powder in 10-3 torr O 2
Manganese Sulphide	MnS	1615	3.99	—	—	—	1300	—	—	—
Mercury	Hg	-39	13.55	—	-68	-42	-6	—	—	Toxic, not recommended for evaporation processes
Mercury Sulphide	HgS		8.1	—	—	—	250	eBeam (poor)	Al2O3	Toxic and decomposes, not recommended for evaporation processes
		sublimes			sublimes
Molybdenum	Mo	2610	10.22	—	1592	1822	2117	eBeam (Xlnt)	graphite, W	Films are smooth, hard and adherent
Molybdenum Boride	MoB2	2100	7.12	—	—	—	—	—	—	—
Molybdenum Carbide	Mo2C	2687	9.18	—	—	—	—	—	—	Thin films of Mo2C by sputter deposition and CVD have been reported
Molybdenum Disulphide	MoS2	1185	4.8	—	—	—	~50	—	—	Fabrication of MoS2 by CVD has been reported
Molybdenum Silicide	MoSi2	2050	6.3	—	—	—	~50	—	—	MoSi2 films have been produced by sputter deposition
Molybdenum Trioxide	MoO3	795	4.7	—	—	—	~900	eBeam (fair)	Al2O3, graphite, BN, Mo	Substrate heating improves film crystallinity
Neodymium	Nd	1024	7	—	731	871	1062	eBeam (Xlnt)	Al2O3, Ta	—
Neodymium Fluoride	NdF3	1410	6.5	—	—	—	~900	eBeam (good)	W, Mo, Al2O3	Substrate heating at 360°C improved film quality
Neodymium Oxide	Nd2O3	2272	7.24	—	—	—	~1400	eBeam (good)	W, Ta	Films may be oxygen deficient. Refractive index increases with increasing substrate temperature
Nickel	Ni	1453	8.91	0.331	927	1072	1262	eBeam (Xlnt)	Al2O3, BeO, W, graphite	Differential thermal expansion between Ni and graphite can cause graphite crucible liners to crack on cooling
Nickel Bromide	NiBr2	963	4.64	—	—	—	362	—	—	—
					sublimes
Nickel Chloride	NiCl2	1001	3.55	—	—	—	444	—	—	—
					sublimes
Nickel Oxide	NiO	1990	7.45	—	—	—	~1470	eBeam (good)	Al2O3, W	Substrate temperature of 125°C improves film adhesion and quality. Use of NiO powder as source material mitigates spitting
Niobium (Columbium)	Nb (Cb)	2468	8.55	—	1728	1977	2287	eBeam (Xlnt)	graphite	Ion assisted eBeam evaporation modifies Nb film stress from tensile to compressive at a substrate temperature of 400°C
Niobium Boride	NbB2	3050	6.97	—	—	—	—	—	—	—
Niobium Carbide	NbC	3800	7.82	—	—	—	—	eBeam (fair)	graphite	NbC thin films on Ti has been reported
Niobium Nitride	NbN	2573	8.4	—	—	—	—	eBeam (fair)	graphite, W	NbN films have been fabricated using reactive evaporation and reactive sputtering in N2. NbN films by ion assisted evaporation have also been reported
Niobium Oxide	NbO	—	6.27	—	—	—	1100	—	—	—
Niobium Pentoxide	Nb2O5	1530	4.47	—	—	—	—	—	—	Nb2O5 films produced by RF magnetron sputtering using a stoichiometric target have been reported
Niobium Telluride	NbTe	—	7.6	—	—	—	—	—	—	—
Niobium-Tin	Nb3Sn	—	—	—	—	—	—	eBeam (Xlnt)	graphite, Ta	Films produced by co-evaporation of Nb and Sn have been reported. Substrate heating improves film homogeneity
Niobium Trioxide	Nb2O3	1780	7.5	—	—	—	—	—	—	—
Osmium	Os	1700	22.5	—	2170	2430	2760	—	—	—
Palladium	Pd	1550	12.4	—	—	—	1192	eBeam (Xlnt)	W, Al2O3, graphite	Susceptible to metal spitting. Mitigate with slow power ramp and longer soak before deposition
Palladium Oxide	PdO	870	8.31	—	—	—	575	eBeam (poor)	Al2O3	Decomposes
Phosphorus	P	41.4	1.82	—	327	361	402	eBeam (poor)	Al2O3	Reacts violently in air
Platinum	Pt	1769	21.45	0.245	1292	1492	1747	eBeam (Xlnt)	W, Al2O3, graphite	Low deposition rates (< 5 Å/sec) preferred for film uniformity. Carbon contamination with graphite liners is possible at high power
Plutonium	Pu	635	19	—	—	—	—	—	—	Toxic. Radioactive
Polonium	Po	254	9.4	—	117	170	244	—	—	Toxic. Radioactive
Potassium	K	64	0.86	—	23	60	125	—	quartz	Highly reactive in air
Potassium Bromide	KBr	730	2.75	—	—	—	~450	—	quartz	Use gentle preheat to outgas
Potassium Chloride	KCl	776	1.98	—	—	—	~510	eBeam (fair)	Ta, quartz, Mo	Use gentle preheat to outgas
Potassium Fluoride	KF	880	2.48	—	—	—	~500	eBeam (poor)	quartz	Use gentle preheat to outgas
Potassium Hydroxide	KOH	360	2.04	—	—	—	~400	—	—	—
Potassum Iodide	KI	72	3.13	—	—	—	~500	—	—	—
Praseodymium	Pr	931	6.78	—	800	950	1150	eBeam (good)	W, graphite, Ta	Pr films will oxidize in air
Praseodymium Oxide	Pr2O3	2125	6.88	—	—	—	1400	eBeam (good)	W, graphite, ThO2	Loses oxygen. Reports of Pr2O3 thin films grown by MBE
					10-8	10-6	10-4
Radium	Ra	700	5	—	246	320	416	—	—	—
Rhenium	Re	3180	20.53	—	1928	2207	2571	eBeam (good)	W, graphite	Substrate heating at 600°C improves film properties
Rhenium Oxide	ReO3	297	8.2	—	—	—	~100	eBeam (good)	W, graphite	Films produced by reactive evaporation of Re in 10-3 torr O 2
Rhodium	Rh	1966	12.41	—	1277	1472	1707	eBeam (good)	W, graphite	—
Rubidium	Rb	38.5	1.47	—	-3	37	111	—	quartz	—
Rubidium Chloride	RbCl	715	2.76	—	—	—	~500	—	quartz	—
Rubidium Iodide	RbI	642	3.55	—	—	—	~400	—	quartz	—
Ruthenium	Ru	2700	12.45	—	1780	1990	2260	eBeam (poor)	W	Material spits using eBeam. Sputter deposition is preferred
Samarium	Sm	1072	7.54	—	373	460	573	eBeam (good)	Al2O3	—
Samarium Oxide	Sm2O3	2350	7.43	—	—	—	—	eBeam (good)	W	Loses oxygen. Sputter deposition is preferred
Samarium Sulphide	Sm2S3	1900	5.72	—	—	—	—	—	—	—
Scandium	Sc	1539	2.99	—	714	837	1002	eBeam (Xlnt)	W, Mo, Al2O3	Alloys with Ta
Scandium Oxide	Sc2O3	2300	3.86	—	—	—	~400	eBeam (fair)	W	Loses oxygen. Films produced by reactive sputtering in O2 have been reported
Selenium	Se	217	4.79	—	89	125	170	eBeam (good)	W, Mo, graphite, Al2O3	Toxic. Can contaminate vacuum systems
Silicon	Si	1410	2.42	0.712	992	1147	1337	eBeam (fair)	Ta, graphite, BeO	High deposition rates possible. Molten Si can attack graphite liners limiting crucible liner life
Silicon Boride	SiB6	—	2.47	—	—	—	—	—	—	—
Silicon Carbide	SiC	2700	3.22	—	—	—	1000	eBeam (fair)	W	Sputter deposition is the preferred thin film fabrication technique
Silicon Dioxide	SiO2	1610-1710	2.2-2.7	1	—	—	~1025	eBeam (Xlnt)	Al2O3, Ta, graphite, W	Swept beam is critical to avoid hole drilling, since the source material will have a shallow melt pool
					Influenced by composition
Silicon Monoxide	SiO	1702	2.1	—	—	—	850	eBeam (fair)	W, Ta, graphite	Thin films from bulk SiO material has been reported
					sublimes
Silicon Nitride	Si3N4	—	3.44	—	—	—	~800	—	—	Thin films of Si3N3 by reactive sputter deposition have been reported
		sublimes
Silicon Selenide	SiSe	—	—	—	—	—	550	—	—	—
Silicon Sulphide	SiS	—	1.85	—	—	—	450	—	—	—
		sublimes
Sillicon Telluride	SiTe2	—	4.39	—	—	—	550	—	—	—
Silver	Ag	961	10.49	0.529	847	958	1105	eBeam (Xlnt)	W, Al2O3, Ta, Mo, graphite	Swept beam during melt and focused beam during deposition is recommended for higher deposition rates
Silver Bromide	AgBr	432	6.47	—	—	—	~380	—	—	—
Silver Chloride	AgCl	455	5.56	—	—	—	~520	—	—	—
Silver Iodide	AgI	558	5.67	—	—	—	~500	—	—	Thin films of AgI fabricated by thermal evaporation have been reported
Sodium	Na	97	0.97	—	74	124	192	—	quartz	Use gentle preheat to outgas. Metal reacts violently in air
Sodium Bromide	NaBr	755	3.2	—	—	—	~400	—	—	—
Sodium Chloride	NaCl	801	2.16	—	—	—	530	—	—	Thin films of NaCl fabricated by thermal evaporation in Knudsen cells with quartz crucibles have been reported
Sodium Cyanide	NaCN	563	—	—	—	—	~550	—	—	—
Sodium Fluoride	NaF	988	2.79	—	—	—	~700	eBeam (good)	W, Ta, graphite, BeO	Use gentle preheat to outgas. NaF thin films produced from powder source material and 230°C substrate heating have been reported
Sodium Hydroxide	NaOH	318	2.13	—	—	—	~470	—	—	—
Strontium	Sr	769	2.6	—	239	309	403	eBeam (poor)	graphite, quartz	Wets refractory metals. May react strongly in air
Strontium Fluoride	SrF2	1190	4.24	—	—	—	~1000	eBeam (poor)	Al2O3, W, quartz	Thin films of SrF2 produced by eBeam and thermal evaporation have been reported
Strontium Oxide	SrO	2460	4.7	—	—	—	1500	eBeam (poor)	Al2O3	Loses oxygen. Reacts with W and Mo
					sublimes
Strontium Sulphide	SrS	>2000	3.7	—	—	—	—	—	—	Decomposes
Sulphur	S8	115	2	—	13	19	57	eBeam (poor)	quartz	Can contaminate vacuum systems
Tantalum	Ta	2996	16.6	—	1960	2240	2590	eBeam (Xlnt)	graphite	High melting point of Ta limits crucible liner selection. High vacuum is required to mitigate oxygen incorporation in films
Tantalum Boride	TaB2	3000	12.38	—	—	—	—	—	—	—
Tantalum Carbide	TaC	3880	14.65	—	—	—	~2500	—	—	—
Tantalum Nitride	TaN	3360	16.3	—	—	—	—	eBeam (fair)	graphite	Thin films of TaN can be produced by reactive evaporation in 10-3 torr N 2
Tantalum Pentoxide	Ta2O5	1800	8.74	—	1550	1780	1920	eBeam (good)	graphite, Ta	Swept beam to avoid hole drilling. A thin Ti layer will improve adhesion to the substrate
Tantalum Sulphide	TaS2	1300	—	—	—	—	—	—	—	—
Technetium	Tc	2200	11.5	—	1570	1800	2090	—	—	—
Tellurium	Te	452	6.25	—	157	207	277	eBeam (poor)	Al2O3, quartz, graphite	Wets refractory metals
Terbium	Tb	1357	8.27	—	800	950	1150	eBeam (Xlnt)	Al2O3, graphite, Ta	Thin films produced by sputter deposition and thermal evaporation have also been reported
Terbium Fluoride	TbF3	1176	—	—	—	—	~800	—	—	Sputter deposition is preferred
Terbium Oxide	Tb2O3	2387	7.87	—	—	—	1300	—	—	Thin films prepared by pulsed laser deposition have been reported
Terbium Peroxide	Tb4O7	2340	7.3	—	—	—	—	—	—	Annealing of Tb2O3 films at 800°C in air to produce stable Tb4O7 has been reported
Thallium	Tl	302	11.85	—	280	360	470	eBeam (poor)	Al2O3, quartz, graphite	Thallium and its compounds are very toxic. Wets freely
Thallium Bromide	Tlbr	480	7.56	—	—	—	~250	—	—	Thermal evaporation of TlBr thin films has been reported
					sublimes
Thallium Chloride	TlCl	430	7	—	—	—	~150	—	—	—
					sublimes
Thallium Iodide (ß)	TlI	440	7.09	—	—	—	~250	eBeam (poor)	Al2O3, quartz	Low stress thin films can be produced by eBeam evaporation with a substrate temperature of 100°C
Thallium Oxide	Tl2O3	717	9.65	—	—	—	350	—	—	Disproportionates at 850°C to Tl2O
Thorium	Th	1875	11.7	—	1430	1660	1925	eBeam (Xlnt)	W, Ta, Mo	Toxic and mildly radioactive
Thorium Bromide	ThBr4	—	5.67	—	—	—	—	—	—	—
					sublimes
Thorium Carbide	ThC2	2273	8.96	—	—	—	~2300	—	—	—
Thorium Dioxide	ThO2	3050	10.03	—	—	—	~2100	eBeam (good)	W	Stable stoichiometric films of ThO2 produced from powdered source material have been reported
Thorium Fluoride	ThF4	1110	6.3	—	—	—	~750	eBeam (fair)	Ta, Mo, graphite	Use gentle preheat to outgas. Substrate temperature of 175°C improves film adhesion and quality
Thorium Oxyfluoride	ThOF2	900	9.1	—	—	—	—	eBeam (poor)	W, Ta, Mo, graphite	Does not evaporate stoichiometrically, resulting films are primarily ThF4
Thorium Sulphide	ThS2	—	6.8	—	—	—	—	—	—	—
Thulium	Tm	1545	9.32	—	461	554	680	eBeam (good)	Al2O3	—
					sublimes
Thulium Oxide	Tm2O3	—	8.9	—	—	—	1500	—	—	Thin films of Tm2O3 by eBeam evaporation and MBE have been reported
Tin	Sn	232	7.75	0.724	682	807	997	eBeam (Xlnt)	Al2O3, Ta, graphite, W	High deposition rates possible, but uniformity may suffer. Slow power ramp to mitigate cavitation of melt pool
Tin Oxide	SnO2	1127	6.95	—	—	—	~1000	eBeam (Xlnt)	Al2O3, quartz	Substrate temperature above 200°C improves film crystallinity
					sublimes
Tin Selenide	SnSe	861	6.18	—	—	—	~400	—	—	Stoichiometric thin films of SnSe produced by thermal evaporation of powdered source material have been reported
Tin Sulphide	SnS	882	5.08	—	—	—	~450	eBeam (poor)	quartz, W	Thin films prepared by eBeam evaporation of SnS powder and reactive co-evaporation of Sn and S have been reported
Tin Telluride	SnTe	780	6.44	—	—	—	~450	eBeam (poor)	quartz	Thin films of SnTe produced with eBeam evaporation at a substrate temperature of 300°C have been reported
Titanium	Ti	1675	4.5	0.628	1067	1235	1453	eBeam (Xlnt)	W, graphite, TiC	Films are very adherent to almost any substrate
Titanium Boride	TiB2	2980	4.5	—	—	—	—	—	—	Sputter deposition is the preferred thin film fabrication technique
Titanium Carbide	TiC	3140	4.93	—	—	—	~2300	eBeam (fair)	W, graphite	eBeam evaporation of TiC thin films with and without ion beam assistance have been reported
Titanium Dioxide	TiO2	1640	4.29	—	—	—	~1300	eBeam (good)	W, graphite, Ta	Stoichiometric thin films of TiO2 have been produced from powder source material and a substrate temperature of 600°C
Titanium Monoxide	TiO	1750	—	—	—	—	~1500	eBeam (good)	W, graphite, Ta	Outgas with gentle preheat prior to deposition
Titanium Nitride	TiN	2930	5.43	—	—	—	—	eBeam (good)	W, graphite, TiC	Thin films have been prepared by reactive evaporation of Ti in N2 partial pressure
Titanium Sesquioxide	Ti2O3	2130	4.6	—	—	—	—	eBeam (good)	W, Ta, graphite	Stoichiometric films have been produced by reactive evaporation of Ti O powder in 2.5 x 10-4 torr O 2 3 2
Tungsten	W	3410	19.3	0.163	2117	2407	2757	eBeam (good)	W	Long, slow preheat is required to condition the source material. Raster the electron beam to avoid hole drilling
Tungsten Boride	WB2	2900	12.75	—	—	—	—	—	—	—
Tungsten Carbide	W2C	2860	17.15	—	1480	1720	2120	eBeam (good)	W, graphite	Thin films prepared by eBeam evaporation of powdered source material have been reported. RF Sputter deposition is widely reported
Tungsten Telluride	WTe3	—	9.49	—	—	—	—	—	—	—
Tungsten Trioxide	WO3	1473	7.16	—	—	—	980	eBeam (good)	W	Thin films are most commonly prepared using WO3 powder source material
					sublimes
Uranium	U	1132	19.07	—	1132	1327	1582	eBeam (good)	W, Mo, graphite	Depleted uranium thin films oxidize easily even in low partial pressure of O2
Uranium Carbide	UC2	2260	11.28	—	—	—	2100	—	—	—
Uranium Dioxide	UO2	2176	10.9	—	—	—	—	eBeam (fair)	W	Stoichiometric thin films produced by reactive evaporation of depleted uranium in O2 partial pressure have been reported
Uranium Fluoride	UF4	~1000	—	—	—	—	300	—	—	Thin films fabricated by sputter deposition of depleted uranium by F– ions has been reported
Uranium Oxide	U3O8	Decomposes	8.3	—	—	—	—	—	—	Thin films produced by reactive sputter deposition of depleted uranium targets in O2 have been reported.
Uranium Phosphide	UP2	—	8.57	—	—	—	1200	—	—	—
Uranium Sulphide	U2S3	—	—	—	—	—	1400	—	—	—
Vanadium	V	1890	5.96	—	1162	1332	1547	eBeam (Xlnt)	W, graphite, Ta	Wets Mo. eBeam evaporation is preferred
Vanadium Boride	VB2	2400	5.1	—	—	—	—	—	—	—
Vanadium Carbide	VC	2810	5.77	—	—	—	~1800	—	—	—
Vanadium Dioxide	VO2	1967	4.34	—	—	—	~575	eBeam (poor)	W, graphite	Difficult to maintain stoichiometry by eBeam evaporation, sputter deposition is preferred
					sublimes
Vanadium Nitride	VN	2320	6.13	—	—	—	—	—	—	—
Vanadium Pentoxide	V2O5	690	3.36	—	—	—	~500	eBeam (good)	W, graphite	Thin films prepared from powdered source material are nearly stoichiometric. Post process annealing at 280° in O2 restores full stoichiometry
Vanadium Silicide	VSi2	1700	4.42	—	—	—	—	—	—	—
Ytterbium	Yb	824	6.98	—	520	590	690	eBeam (good)	Al2O3, W, Ta	Store Yb evaporation source material in N2 desiccator to mitigate oxidation
					sublimes
Ytterbium Fluoride	YbF3	1157	8.17	—	—	—	~800	eBeam (fair)	Ta, Mo, W	Preheat slowly and evaporate at ≤ 10Å/sec to mitigate dissociation
Ytterbium Oxide	Yb2O3	2346	9.17	—	—	—	~1500	eBeam (fair)	Al2O3, W, Ta	Thin films produced by reactive evaporation in 8 x 10-5 torr O have 2 been reported.
					sublimes
Yttrium	Y	1509	4.48	—	830	973	1157	eBeam (Xlnt)	W, Al2O3	Substrate heating at 300°C improves adhesion and film smoothness
Yttrium Aluminum Oxide	Y3Al5O12	1990	—	—	—	—	—	eBeam (good)	W, Al2O3	Films prepared from powdered source material, typically with dopants. YAG films post deposition annealed at 1100°C in vacuum improves crystallinity
Yttrium Fluoride	YF3	1387	4.01	—	—	—	—	eBeam (good)	W, Ta, Mo, Al2O3	eBeam evaporation at a rate of ≤ 10Å/sec and substrate temperature of 200°C produces crystalline films with good adhesion
Yttrium Oxide	Y2O3	2680	4.84	—	—	—	~2000	eBeam (good)	graphite, W	eBeam evaporated films can be oxygen deficient, post deposition annealing in 10-3 torr O at 525°C results in 2 stoichiometric films.
					sublimes
Zinc	Zn	419	7.14	0.514	127	177	250	eBeam (Xlnt)	W, Al2O3, quartz, graphite	Evaporates well under a wide range of conditions
Zinc Antimonide	Zn3Sb2	546	6.3	—	—	—	—	—	—	—
Zinc Bromide	ZnBr2	394	4.22	—	—	—	~300	—	—	—
Zinc Fluoride	ZnF2	87	4.84	—	—	—	~800	eBeam (fair)	quartz, W	Thin films prepared by eBeam evaporation of powdered source material have been reported. Substrate heating at 400°C improved crystallinity
Zinc Nitride	Zn3N2	—	6.22	—	—	—	—	—	—	Reactive sputter deposition in N2 has been reported
Zinc Oxide	ZnO	1975	5.61	—	—	—	~1800	eBeam (fair)	quartz, W	Quality thin films fabricated using eBeam evaporation at a rate of 8Å/sec and a substrate temperature of 300°C has been reported
Zinc Selenide	ZnSe	1526	5.42	—	—	—	660	eBeam (fair)	W, Ta, Mo, quartz	Deposition rate of ≤ 5 Å/sec. Thin films are polycrystalline and a substrate temperature of 300°C improves adhesion and size of crystallites
Zinc Sulphide	ZnS	1830	4.09	—	—	—	~800	eBeam (good)	W, Ta, Mo, quartz	Thin films produced by eBeam evaporation display a preferred (111) orientation and best optical properties result from a 400°C substrate temperature
					sublimes
Zinc Telluride	ZnTe	1238	6.34	—	—	—	~600	eBeam (fair)	W, Ta, Mo, quartz	Stoichiometric thin films produced by eBeam evaporation have good crystallinity with a substrate temperature of 230°C. Optical properties are thickness dependent
Zircon	ZrSiO4	2550	4.56	—	—	—	—	—	—	—
Zirconium	Zr	1852	6.4	—	1477	1702	1987	eBeam (Xlnt)	W, quartz	Alloys with W. Thin films oxidize readily
Zirconium Boride	ZrB2	3040	6.08	—	—	—	—	eBeam (good)	W, quartz	Stoichiometric films prepared by co-evaporation of Zr and B have been reported
Zirconium Carbide	ZrC	3540	6.73	—	—	—	~2500	eBeam (poor)	graphite	Quality thin films of ZrC using pulsed laser deposition have been reported
Zirconium Nitride	ZrN	2980	7.09	—	—	—	—	—	—	Thin films of ZrN prepared by N2 ion assisted evaporation of Zr have been reported
Zirconium Oxide	ZrO2	2700	5.49	—	—	—	~220	eBeam (good)	W, graphite	Reactive evaporation in 10-3 torr O 2 produce as deposited stoichiometric films. For eBeam evaporated films, post deposition annealing in O2 restores stoichiometry
Zirconium Silicide	ZrSi2	1700	4.88	—	—	—	—	—	—	eBeam evaporated Zr on Si substrates forms ZrSi2 following post deposition thermal annealing at 600°C